公开(公告)号：US20140024216A1

公开(公告)日：2014-01-23

申请号：US13551423

申请日：2012-07-17

申请人： Matthias STENDER ,  Glenn WHITENER ,  Chul Woo NAM

发明人： Matthias STENDER ,  Glenn WHITENER ,  Chul Woo NAM

IPC分类号： C09K13/00 ,  H01L21/306

CPC分类号： C09K3/1463 ,  C09G1/02 ,  C09K3/1436

摘要： The present invention provides chemical-mechanical polishing (CMP) compositions suitable for polishing a substrate comprising a germanium-antimony-tellurium (GST) alloy. The CMP compositions of the present invention are aqueous slurries comprising a particulate abrasive, a water-soluble surface active agent, a complexing agent, and a corrosion inhibitor. The ionic character of the surface active material (e.g., cationic, anionic, or nonionic) is selected based on the zeta potential of the particulate abrasive. A CMP method for polishing a GST alloy-containing substrate utilizing the composition is also disclosed.

摘要翻译： 本发明提供了适用于抛光包含锗 - 锑 - 碲（GST）合金的基材的化学机械抛光（CMP）组合物。 本发明的CMP组合物是包含颗粒磨料，水溶性表面活性剂，络合剂和腐蚀抑制剂的水性浆料。 基于颗粒磨料的ζ电位来选择表面活性材料（例如阳离子，阴离子或非离子）的离子特性。 还公开了利用该组合物研磨含GST合金的基材的CMP方法。