公开(公告)号：US10020247B2

公开(公告)日：2018-07-10

申请号：US14950865

申请日：2015-11-24

申请人： Maxlinear, Inc.

发明人： Weizhong Cai ,  Kimihiko Imura ,  Wei Gu

IPC分类号： H01L23/495 ,  H01L21/48

CPC分类号： H01L23/49589 ,  H01L21/4825 ,  H01L23/4951 ,  H01L23/49551 ,  H01L23/49575 ,  H01L23/5223 ,  H01L27/0207 ,  H01L28/40 ,  H01L28/86 ,  H01L2924/0002 ,  H01L2924/00

摘要： Methods and systems for improved matching for on-chip capacitors may comprise in a semiconductor die comprising an on-chip capacitor with one or more metal layers: electrically coupling a first set of metal fingers, electrically coupling a second set of metal fingers that are interdigitated with the first set of metal fingers, wherein the first set of metal fingers and the second set of metal fingers are arranged symmetrically in the semiconductor die, and configuring the on-chip capacitor in a plurality of symmetric sections, wherein a boundary between each of the plurality of sections is configured in a zig-zag pattern. The first set of metal fingers and the second set of metal fingers may be arranged with radial symmetry. A first set of metal fingers in a first metal layer may be electrically coupled to a set of metal fingers in a second metal layer.

公开(公告)号：US20150054126A1

公开(公告)日：2015-02-26

申请号：US14319747

申请日：2014-06-30

申请人： Maxlinear, Inc.

发明人： Weizhong Cai

IPC分类号： H01L49/02 ,  H01G4/002 ,  H01L21/71

CPC分类号： H01G4/002 ,  H01G4/005 ,  H01G4/228 ,  H01L23/5223 ,  H01L28/88 ,  H01L28/92 ,  H01L2924/0002 ,  H01L2924/00

摘要： Methods and systems for a metal finger capacitor with a triplet repeating sequence incorporating a metal underpass may comprise repeating triplet capacitors integrated on a semiconductor die. The capacitors may comprise a first set of interconnected metal fingers comprising a first terminal of a first capacitor, a second set of interconnected metal fingers comprising a first terminal of a second capacitor, and a third set of interconnected metal fingers comprising a common node that surrounds the first and second sets of interconnected metal fingers. The common node may comprise a second terminal of the capacitors. A repeating pattern of fingers may be: (third set/second set/third set/first set . . . ). The repeating pattern of metal fingers may be arranged in two parallel rows to mitigate variations in the semiconductor die. The interconnected metal fingers may comprise first and second metal layers formed on the semiconductor die.

摘要翻译： 具有并入金属通道的三重重复序列的金属制电容器的方法和系统可以包括集成在半导体管芯上的重复三重态电容器。 电容器可以包括第一组互连金属指，其包括第一电容器的第一端子，第二组互连的金属指，其包括第二电容器的第一端子以及第三组相互连接的金属指状物，其包括围绕 第一组和第二组相互连接的金属指。 公共节点可以包括电容器的第二端子。 手指的重复模式可以是：（第三组/第二组/第三组/第一组）...。 金属指的重复图案可以布置成两排平行，以减轻半导体管芯的变化。 互连的金属指可以包括形成在半导体管芯上的第一和第二金属层。

公开(公告)号：US20180323135A1

公开(公告)日：2018-11-08

申请号：US16030397

申请日：2018-07-09

申请人： Maxlinear, Inc.

发明人： Weizhong Cai ,  Kimihiko Imura ,  Wei Gu

IPC分类号： H01L23/495 ,  H01L23/522 ,  H01L49/02 ,  H01L21/48 ,  H01L27/02

CPC分类号： H01L23/49589 ,  H01L21/4825 ,  H01L23/4951 ,  H01L23/49551 ,  H01L23/49575 ,  H01L23/5223 ,  H01L27/0207 ,  H01L28/40 ,  H01L28/86 ,  H01L2924/0002 ,  H01L2924/00

摘要： Methods and systems for improved matching of on-chip capacitors may comprise a semiconductor die with an on-chip capacitor comprising one or more metal layers. The on-chip capacitor may comprise interdigitated electrically coupled metal fingers. The electrically coupled metal fingers may be arranged symmetrically in the semiconductor die to compensate for non-uniformities in the one or more metal layers. The metal fingers may be arranged with radial symmetry. Metal fingers in a first metal layer may be electrically coupled to metal fingers in a second metal layer. An orientation of metal fingers may be alternated when coupling metal fingers in a plurality of metal layers. The metal fingers may be coupled at the center or the outer edge of the on-chip capacitor. The on-chip capacitor may be configured in a plurality of symmetric sections wherein a boundary between each of the plurality of sections is configured in a zig-zag pattern.

公开(公告)号：US20170148712A1

公开(公告)日：2017-05-25

申请号：US14950865

申请日：2015-11-24

申请人： Maxlinear, Inc.

发明人： Weizhong Cai ,  Kimihiko Imura ,  Wei Gu

IPC分类号： H01L23/495 ,  H01L21/48

CPC分类号： H01L23/49589 ,  H01L21/4825 ,  H01L23/4951 ,  H01L23/49551 ,  H01L23/49575 ,  H01L23/5223 ,  H01L27/0207 ,  H01L28/40 ,  H01L28/86 ,  H01L2924/0002 ,  H01L2924/00

摘要： Methods and systems for improved matching of on-chip capacitors may comprise a semiconductor die with an on-chip capacitor comprising one or more metal layers. The on-chip capacitor may comprise interdigitated electrically coupled metal fingers. The electrically coupled metal fingers may be arranged symmetrically in the semiconductor die to compensate for non-uniformities in the one or more metal layers. The metal fingers may be arranged with radial symmetry. Metal fingers in a first metal layer may be electrically coupled to metal fingers in a second metal layer. An orientation of metal fingers may be alternated when coupling metal fingers in a plurality of metal layers. The metal fingers may be coupled at the center or the outer edge of the on-chip capacitor. The on-chip capacitor may be configured in a plurality of symmetric sections wherein a boundary between each of the plurality of sections is configured in a zig-zag pattern.

公开(公告)号：US09384891B2

公开(公告)日：2016-07-05

申请号：US14319747

申请日：2014-06-30

申请人： Maxlinear, Inc.

发明人： Weizhong Cai

IPC分类号： H01L21/02 ,  H01G4/002 ,  H01L23/522 ,  H01G4/005 ,  H01G4/228 ,  H01L49/02

CPC分类号： H01G4/002 ,  H01G4/005 ,  H01G4/228 ,  H01L23/5223 ,  H01L28/88 ,  H01L28/92 ,  H01L2924/0002 ,  H01L2924/00

摘要： Methods and systems for a metal finger capacitor with a triplet repeating sequence incorporating a metal underpass may comprise repeating triplet capacitors integrated on a semiconductor die. The capacitors may comprise a first set of interconnected metal fingers comprising a first terminal of a first capacitor, a second set of interconnected metal fingers comprising a first terminal of a second capacitor, and a third set of interconnected metal fingers comprising a common node that surrounds the first and second sets of interconnected metal fingers. The common node may comprise a second terminal of the capacitors. A repeating pattern of fingers may be: (third set/second set/third set/first set . . . ). The repeating pattern of metal fingers may be arranged in two parallel rows to mitigate variations in the semiconductor die. The interconnected metal fingers may comprise first and second metal layers formed on the semiconductor die.

摘要翻译： 具有并入金属通道的三重重复序列的金属制电容器的方法和系统可以包括集成在半导体管芯上的重复三重态电容器。 电容器可以包括第一组互连金属指，其包括第一电容器的第一端子，第二组互连的金属指，其包括第二电容器的第一端子以及第三组相互连接的金属指状物，其包括围绕 第一组和第二组相互连接的金属指。 公共节点可以包括电容器的第二端子。 手指的重复模式可以是：（第三组/第二组/第三组/第一组）...。 金属指的重复图案可以布置成两排平行，以减轻半导体管芯的变化。 互连的金属指可以包括形成在半导体管芯上的第一和第二金属层。