公开(公告)号：US09378805B2

公开(公告)日：2016-06-28

申请号：US13663939

申请日：2012-10-30

Applicant: Medtronic, Inc.

Inventor： Kevin K. Walsh ,  Brandon P. Scott ,  Larry E. Tyler

IPC: G11C11/417

CPC classification number: G11C11/417

Abstract: Random access memory having a plurality of memory cells, each of the plurality of memory cells having a memory element and a first electrical characteristic being variable based, at least in part, on temperature and a bias circuit operatively coupled to at least one of the plurality of memory cells, the bias circuit being configured to generate a bias voltage for the at least one of the plurality of memory cells. The bias circuit has a second electrical characteristic being variable based, at least in part, on temperature. The first electrical characteristic is approximately proportional to the second electrical characteristic over a predetermined range of temperatures, the predetermined range of temperatures being greater than zero. The bias voltage on each of the plurality of memory cells is approximately proportional with variations in the first electrical characteristic over the predetermined range of temperatures.

Abstract translation: 具有多个存储器单元的随机存取存储器，所述多个存储器单元中的每一个具有存储元件和第一电特性，所述第一电特性至少部分地基于温度和偏置电路而变化，所述偏置电路可操作地耦合到所述多个存储器单元中的至少一个 所述偏置电路被配置为产生所述多个存储器单元中的所述至少一个存储器单元的偏置电压。 偏置电路具有至少部分地基于温度变化的第二电特性。 在预定温度范围内，第一电特性与第二电特性近似成比例，预定温度范围大于零。 多个存储单元中的每一个上的偏置电压几乎与预定温度范围内的第一电特性的变化成比例。

公开(公告)号：US20130170287A1

公开(公告)日：2013-07-04

申请号：US13663939

申请日：2012-10-30

Applicant: MEDTRONIC, INC.

Inventor： Kevin K. Walsh ,  Brandon P. Scott ,  Larry E. Tyler

IPC: G11C11/00

CPC classification number: G11C11/417

Abstract: Random access memory having a plurality of memory cells, each of the plurality of memory cells having a memory element and a first electrical characteristic being variable based, at least in part, on temperature and a bias circuit operatively coupled to at least one of the plurality of memory cells, the bias circuit being configured to generate a bias voltage for the at least one of the plurality of memory cells. The bias circuit has a second electrical characteristic being variable based, at least in part, on temperature. The first electrical characteristic is approximately proportional to the second electrical characteristic over a predetermined range of temperatures, the predetermined range of temperatures being greater than zero. The bias voltage on each of the plurality of memory cells is approximately proportional with variations in the first electrical characteristic over the predetermined range of temperatures.

Abstract translation: 具有多个存储器单元的随机存取存储器，所述多个存储器单元中的每一个具有存储元件和第一电特性，所述第一电特性至少部分地基于温度和偏置电路而变化，所述偏置电路可操作地耦合到所述多个存储器单元中的至少一个 所述偏置电路被配置为产生所述多个存储器单元中的所述至少一个存储器单元的偏置电压。 偏置电路具有至少部分地基于温度变化的第二电特性。 在预定温度范围内，第一电特性与第二电特性近似成比例，预定温度范围大于零。 多个存储单元中的每一个上的偏置电压几乎与预定温度范围内的第一电特性的变化成比例。