Exposure analyzing system, method for analyzing exposure condition, and method for manufacturing semiconductor device
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    发明申请
    Exposure analyzing system, method for analyzing exposure condition, and method for manufacturing semiconductor device 审中-公开
    曝光分析系统,曝光条件分析方法以及制造半导体器件的方法

    公开(公告)号:US20060172207A1

    公开(公告)日:2006-08-03

    申请号:US11044266

    申请日:2005-01-28

    IPC分类号: G03C5/00

    CPC分类号: G03F7/70641 G03F7/70625

    摘要: An exposure analyzing system includes a microscope measuring CDs in resist patterns, each of the resist patterns being formed by specific defocus and dose conditions, an exposure condition calculator calculating functions of the specific defocus and dose conditions, each of the functions giving one of the CDs, an image arranger arranging images of the resist patterns in a matrix having a first coordinate axis arranging the defocus conditions and a second coordinate axis arranging the dose conditions, and a graphic controller displaying the images and the functions in a coordinate plane implemented by the first and second coordinate axes.

    摘要翻译: 曝光分析系统包括显微镜测量抗蚀剂图案的CD,每个抗蚀剂图案通过特定的散焦和剂量条件形成,曝光条件计算器计算特定散焦和剂量条件的功能,每个功能给出一个CD 图像排列器,其将具有布置散焦条件的第一坐标轴的阵列中的抗蚀剂图案的图像和排列剂量条件的第二坐标轴布置;以及图形控制器,其在由第一 和第二坐标轴。