公开(公告)号：US5930627A

公开(公告)日：1999-07-27

申请号：US851403

申请日：1997-05-05

申请人： Mei Sheng Zhou ,  Sheau-Tan Loong ,  Koon Lay Denise Tan ,  Jian Xun Li ,  Wing Hong Chiu ,  Kok Hiang Stephanie Tang

发明人： Mei Sheng Zhou ,  Sheau-Tan Loong ,  Koon Lay Denise Tan ,  Jian Xun Li ,  Wing Hong Chiu ,  Kok Hiang Stephanie Tang

IPC分类号： H01L21/8247

CPC分类号： H01L27/11521

摘要： Silicon enriched silicon oxynitride is used in applications both as an independent etch stop and as a cap layer and sidewall component over polysilicon gate electrodes in order to prevent insulator thinning and shorts caused by a mis-aligned contact mask. In one embodiment a silicon enriched silicon oxynitride layer is placed over a polysilicon gate with conventional sidewalls and insulative cap. In another embodiment the insulative cap and the sidewalls are formed of a silicon enriched silicon oxinitride. Etching of contact openings in the subsequently deposited insulative layer is suppressed by the silicon enriched silicon oxynitride if it is engaged because of a mis-aligned contact mask. In another embodiment a polysilicon stack edge of a memory device is protected by a conformal silicon oxynitride layer during etching of a self-aligned-source (SAS) region. These embodiments are accomplished with minimal and virtually negligible increase in process complexity or cost.

摘要翻译： 富含硅的氮氧化硅被用作独立的蚀刻停止层以及作为多晶硅栅极电极上的覆盖层和侧壁部件的应用，以便防止由错配对接触掩模引起的绝缘体变薄和短路。 在一个实施例中，将富硅氧氮化硅层放置在具有常规侧壁和绝缘帽的多晶硅栅极上。 在另一个实施例中，绝缘帽和侧壁由富硅硅氮化硅形成。 如果由于不对准的接触掩模而被接合，则由富硅氧氮化物抑制随后沉积的绝缘层中的接触开口的蚀刻。 在另一个实施例中，在自对准源（SAS）区域的蚀刻期间，存储器件的多晶硅堆叠边缘被保形氮氧化硅层保护。 这些实施例以过程复杂性或成本的最小和几乎可忽略的增加来实现。

公开(公告)号：US5567271A

公开(公告)日：1996-10-22

申请号：US507531

申请日：1995-07-26

申请人： Ron F. Chu ,  Chet P. Lim ,  Sheau-Tan Loong

发明人： Ron F. Chu ,  Chet P. Lim ,  Sheau-Tan Loong

IPC分类号： H01L21/311

CPC分类号： H01L21/31138

摘要： A Reactive Ion Etch (RIE) plasma method for removing from semiconductor substrates oxidized organic residues such as oxidized photoresist residues, and the Reactive Ion Etch (RIE) plasma which is employed within the Reactive Ion Etch (RIE) plasma method. A semiconductor substrate upon whose surface resides an oxidized organic residue such as an oxidized photoresist residue is provided into a Reactive Ion Etch (RIE) plasma chamber. Also provided into the chamber is a concentration of oxygen and a concentration of moisture. Finally, a radio frequency excitation of sufficient magnitude is provided to the concentration of oxygen and the concentration of moisture to form a plasma. The oxidized organic residue which resides upon the semiconductor substrate is then removed through etching in the Reactive Ion Etch (RIE) plasma. The concentration of moisture may be introduced into the Reactive Ion Etch (RIE) chamber through desorbtion of moisture within and upon the surface of an oxidized photoresist residue residing upon a semiconductor substrate.

摘要翻译： 用于从半导体衬底去除的反应离子蚀刻（RIE）等离子体方法氧化有机残余物，例如氧化光刻胶残余物和在反应离子蚀刻（RIE）等离子体方法中使用的反应离子蚀刻（RIE）等离子体。 在其表面存在氧化的有机残余物如氧化的光致抗蚀剂残留物的半导体衬底被提供到反应离子蚀刻（RIE）等离子体室中。 还提供到室中的是氧气的浓度和水分的浓度。 最后，提供足够大的射频激发以使氧的浓度和水分的浓度形成等离子体。 然后通过在反应离子蚀刻（RIE）等离子体中蚀刻去除驻留在半导体衬底上的氧化的有机残基。 可以通过在驻留在半导体衬底上的氧化的光致抗蚀剂残余物的表面内和之上解吸湿气将水分浓度引入反应离子蚀刻（RIE）室。