Method for Magnetron Sputtering
    1.
    发明申请

    公开(公告)号:US20240404806A1

    公开(公告)日:2024-12-05

    申请号:US18678798

    申请日:2024-05-30

    Applicant: Melec GmbH

    Abstract: The invention relates to a method for depositing layers on a substrate by means of magnetron sputtering in a deposition chamber with use of at least one magnetron, to which an electrical supply voltage comprising three superimposed electrical excitation forms is applied. The latter comprise a first excitation form, which is formed by a high-frequency voltage with a frequency of 1 MHz to 10 GHZ, a second excitation form in the form of high-power impulses (HIPIMS) with a frequency of 100 Hz to 5 kHz, and a third excitation form, formed by a pulsed d.c. voltage or medium-frequency a.c. voltage with a frequency of between 10 kHz and 100 KHz.

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