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    HIGH POWER GENERATOR AND METHOD OF SUPPLYING HIGH POWER PULSES
    1.
    发明申请
    HIGH POWER GENERATOR AND METHOD OF SUPPLYING HIGH POWER PULSES 有权

    公开(公告)号：US20240429021A1

    公开(公告)日：2024-12-26

    申请号：US18817265

    申请日：2024-08-28

    Applicant: TRUMPF Huettinger Sp. z o. o.

    Inventor： Andrzej Klimczak ,  Andrzej Gieraltowski ,  Michal Balcerak

    IPC: H01J37/24 ,  H01J37/248

    Abstract: A high power (HP) generator includes a plurality of low power (LP) generators, a coupling in which the plurality of LP generators is electrically connected, and a control unit. During operation, at least in some states of the HP generator, a coupling-value at an output of the coupling is higher than an LP-generator-value at an output of one of the plurality of LP generators. The control unit is configured to select a respective contribution of each of the plurality of LP generators in order to generate a rise and/or a decay of a pulse at the output of the coupling. The control unit further includes switching units, having a current rise capability of at least 10 A/μs, and/or having a capability of withstanding a voltage of at least 0.5 kV with voltage rise and fall rates of at least 15 kV/μs.

    Method for Magnetron Sputtering
    2.
    发明申请
    Method for Magnetron Sputtering 有权

    公开(公告)号：US20240404806A1

    公开(公告)日：2024-12-05

    申请号：US18678798

    申请日：2024-05-30

    Applicant: Melec GmbH

    Inventor： Günter Mark ,  Jonathan Löffler

    IPC: H01J37/34 ,  H01J37/24 ,  H01J37/248

    Abstract: The invention relates to a method for depositing layers on a substrate by means of magnetron sputtering in a deposition chamber with use of at least one magnetron, to which an electrical supply voltage comprising three superimposed electrical excitation forms is applied. The latter comprise a first excitation form, which is formed by a high-frequency voltage with a frequency of 1 MHz to 10 GHZ, a second excitation form in the form of high-power impulses (HIPIMS) with a frequency of 100 Hz to 5 kHz, and a third excitation form, formed by a pulsed d.c. voltage or medium-frequency a.c. voltage with a frequency of between 10 kHz and 100 KHz.

    HIGH VOLTAGE FEEDTHROUGH AND CONNECTOR FOR A CHARGED PARTICLE APPARATUS
    3.
    发明公开
    HIGH VOLTAGE FEEDTHROUGH AND CONNECTOR FOR A CHARGED PARTICLE APPARATUS 审中-公开

    公开(公告)号：US20230238736A1

    公开(公告)日：2023-07-27

    申请号：US18122601

    申请日：2023-03-16

    Applicant: ASML Netherlands B.V.

    Inventor： Boudewijn Weijert Herman Jan VAN DER KROON ,  Jurgen VAN SOEST

    IPC: H01R13/52 ,  H01J37/248 ,  H01J37/18

    CPC classification number: H01R13/5221 ,  H01J37/248 ,  H01J37/18

    Abstract: Disclosed herein is a connector for electrically connecting a feedthrough of a vacuum tool to a high voltage power source, the connector comprising: a connector wire assembly configured to be in electrical connection with a high voltage power source; and a connector insulator comprising a channel configured to extend into the connector insulator and to receive a feedthrough pin so as to electrically connect the connector wire assembly with the feedthrough pin; wherein the connector insulator is configured to engage with the feedthrough so that a boundary surface of the connector insulator extends substantially bi-directionally in the direction of the longitudinal axis of the channel.

    COMPOSITE CHARGED PARTICLE BEAM APPARATUS AND CONTROL METHOD THEREOF
    4.
    发明申请
    COMPOSITE CHARGED PARTICLE BEAM APPARATUS AND CONTROL METHOD THEREOF 审中-公开

    公开(公告)号：US20200266029A1

    公开(公告)日：2020-08-20

    申请号：US16785362

    申请日：2020-02-07

    Applicant: HITACHI HIGH-TECH SCIENCE CORPORATION

    Inventor： Yasuhiko SUGIYAMA ,  Naoko Hirose ,  Hiroshi Oba

    IPC: H01J37/248 ,  H01J37/08 ,  H01J37/28

    Abstract: Disclosed is a composite charged particle beam apparatus including: an ion supply unit supplying an ion beam; an acceleration voltage application unit applying an acceleration voltage to the ion beam supplied by the ion supply unit to accelerate the ion beam; a first focusing unit focusing the ion beam; a beam booster voltage application unit applying a beam booster voltage to the ion beam; a second focusing unit focusing the ion beam to irradiate a sample; an electron beam emission unit emitting an electron beam to irradiate the sample; and a controller setting a value of the beam booster voltage that the beam booster voltage application unit applies to the ion beam, based on a value of the acceleration voltage applied to the ion beam by the acceleration voltage application unit and of a set value predetermined according to a focal distance of the focused ion beam.

    ELECTRON GUN AND ELECTRON BEAM APPLICATION DEVICE
    5.
    发明申请
    ELECTRON GUN AND ELECTRON BEAM APPLICATION DEVICE 审中-公开

    公开(公告)号：US20200266020A1

    公开(公告)日：2020-08-20

    申请号：US16644871

    申请日：2017-09-07

    Applicant: Hitachi High-Technologies Corporation

    Inventor： Soichiro MATSUNAGA ,  Yasunari SOHDA ,  Souichi KATAGIRI ,  Makoto SAKAKIBARA ,  Hajime KAWANO ,  Takashi DOI

    IPC: H01J37/063 ,  H01J37/141 ,  H01J37/244 ,  H01J37/248 ,  H01J37/28 ,  H01J37/295

    Abstract: In order to provide an electron gun capable of maintaining a small spot diameter of a beam converged on a sample even when a probe current applied to the sample is increased, a magnetic field generation source 301 is provided with respect to an electron gun including: an electron source 101; an extraction electrode 102 configured to extract electrons from the electron source 101; an acceleration electrode 103 configured to accelerate the electrons extracted from the electron source 101; and a first coil 104 and a first magnetic path 201 having an opening on an electron source side, the first coil 104 and the first magnetic path 201 forming a control lens configured to converge an electron beam emitted from the acceleration electrode 103. The magnetic field generation source is provided for canceling a magnetic field, at an installation position of the electron source 101, generated by the first coil 104 and the first magnetic path 201.

    Plasma delivery system for modulated plasma systems
    6.
    发明授权
    Plasma delivery system for modulated plasma systems 有权

    公开(公告)号：US10720305B2

    公开(公告)日：2020-07-21

    申请号：US16230923

    申请日：2018-12-21

    Applicant: Advanced Energy Industries, Inc.

    Inventor： Gideon Van Zyl

    IPC: H01J37/24 ,  H01J37/32 ,  H01J37/248

    Abstract: Plasma processing systems and methods are disclosed. The plasma processing system includes a high-frequency generator configured to deliver power to a plasma chamber and a low-frequency generator configured to deliver power to the plasma chamber. A filter is coupled between the plasma chamber and the high-frequency generator, and the filter suppresses mixing products of high frequencies produced by the high-frequency generator and low frequencies produced by the low-frequency generator.

    System and method of arc detection using dynamic threshold
    7.
    发明授权
    System and method of arc detection using dynamic threshold 有权

    公开(公告)号：US10515780B1

    公开(公告)日：2019-12-24

    申请号：US16225298

    申请日：2018-12-19

    Applicant: Axcelis Technologies, Inc.

    Inventor： Yusef Nouri

    IPC: H01J37/317 ,  H01J37/08 ,  H01J37/24 ,  H01J37/302 ,  H01J37/248

    Abstract: The present invention is directed to circuits, systems, and methods to quickly to quench an arc that may form between high voltage electrodes associated with an ion source to shorten the duration of the arc and mitigate non-uniform ion implantations. In one example, an arc detection circuit for detecting an arc in an ion implantation system includes an analog-to-digital converter (ADC) and an analysis circuit. The ADC is configured to convert a sensing current indicative of a current being supplied to an electrode in the ion implantation system to a digital current signal that quantifies the sensing current. The analysis circuit is configured to analyze the digital current signal to determine if the digital current signal meets threshold parameter value and in response to the digital current signal meeting the threshold parameter value, provide an arc detection signal to a trigger control circuit that activates an arc quenching mechanism.

    Creating ion energy distribution functions (IEDF)
    8.
    发明授权
    Creating ion energy distribution functions (IEDF) 有权

    公开(公告)号：US10312048B2

    公开(公告)日：2019-06-04

    申请号：US15834939

    申请日：2017-12-07

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Leonid Dorf ,  Travis Koh ,  Olivier Luere ,  Olivier Joubert ,  Philip A. Kraus ,  Rajinder Dhindsa ,  James Hugh Rogers

    IPC: H01J37/08 ,  C23C14/54 ,  C23C16/50 ,  H01J37/248

    Abstract: Systems and methods for creating arbitrarily-shaped ion energy distribution functions using shaped-pulse-bias. In an embodiment, a method includes applying a positive jump voltage to an electrode of a process chamber to neutralize a wafer surface, applying a negative jump voltage to the electrode to set a wafer voltage, and modulating the amplitude of the wafer voltage to produce a predetermined number of pulses to determine an ion energy distribution function. In another embodiment a method includes applying a positive jump voltage to an electrode of a process chamber to neutralize a wafer surface, applying a negative jump voltage to the electrode to set a wafer voltage, and applying a ramp voltage to the electrode that overcompensates for ion current on the wafer or applying a ramp voltage to the electrode that undercompensates for ion current on the wafer.

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