公开(公告)号：US06580641B2

公开(公告)日：2003-06-17

申请号：US10065590

申请日：2002-10-31

申请人： Meng-Yi Wu ,  Kung-Hong Lee ,  Fu-Yuan Chen ,  Hsin-Fen Chou ,  Ching-Song Yang ,  Ya-Chin Kin ,  Ching-Hsiang Hsu

发明人： Meng-Yi Wu ,  Kung-Hong Lee ,  Fu-Yuan Chen ,  Hsin-Fen Chou ,  Ching-Song Yang ,  Ya-Chin Kin ,  Ching-Hsiang Hsu

IPC分类号： G11C1134

CPC分类号： H01L27/11553 ,  G11C16/0433 ,  H01L27/115 ,  H01L29/42328 ,  H01L29/42336 ,  H01L29/66825

摘要： A method of forming and operating a trench split-gate non-volatile flash memory cell structure. The auxiliary gate of the structure is formed inside a trench on one side of the gate and the source terminal is underneath the auxiliary gate, thereby reducing overall area occupation of the auxiliary gate and the source terminal relative to the cell and increasing packing density. By enclosing the common source terminal inside a deep N-well layer, source resistance for reading data from the cell is reduced and the process of etching out a contact opening is simplified. The structure also ensures the injection of most hot electrons into the floating gate, thereby increasing execution speed.

公开(公告)号：US06518126B2

公开(公告)日：2003-02-11

申请号：US10063435

申请日：2002-04-23

申请人： Meng-Yi Wu ,  Kung-Hong Lee ,  Fu-Yuan Chen ,  Hsin-Fen Chou ,  Ching-Song Yang ,  Ya-Chin King ,  Ching-Hsiang Hsu

发明人： Meng-Yi Wu ,  Kung-Hong Lee ,  Fu-Yuan Chen ,  Hsin-Fen Chou ,  Ching-Song Yang ,  Ya-Chin King ,  Ching-Hsiang Hsu

IPC分类号： H01L218247

CPC分类号： H01L27/11553 ,  G11C16/0433 ,  H01L27/115 ,  H01L29/42328 ,  H01L29/42336 ,  H01L29/66825

摘要： A method of forming and operating a trench split-gate non-volatile flash memory cell structure. The auxiliary gate of the structure is formed inside a trench on one side of the gate and the source terminal is underneath the auxiliary gate, thereby reducing overall area occupation of the auxiliary gate and the source terminal relative to the cell and increasing packing density. By enclosing the common source terminal inside a deep N-well layer, source resistance for reading data from the cell is reduced and the process of etching out a contact opening is simplified. The structure also ensures the injection of most hot electrons into the floating gate, thereby increasing execution speed.