公开(公告)号：US20240241450A1

公开(公告)日：2024-07-18

申请号：US18412449

申请日：2024-01-12

Applicant: Meta Materials Inc.

Inventor： Milad Khoshnegar Shahrestani ,  Ripon Dey

IPC: G03F7/00 ,  G03F7/30 ,  H01J37/32

CPC classification number: G03F7/704 ,  G03F7/0005 ,  G03F7/30 ,  H01J37/32082 ,  H01J37/32449 ,  H01J2237/3341

Abstract: A method for patterning a substrate involves depositing a layer of resist material on a surface of the substrate, lithographically patterning (electron beam exposing and then developing) the layer of the resist material to form a patterned resist layer having a pattern multi-faceted microscale structures with a depth profile that varies over an area of the layer of resist material, and using the patterned resist layer in an etching step to transfer the pattern of multi-faceted microscale structures from the patterned resist layer to the substrate.