公开(公告)号：US20240363405A1

公开(公告)日：2024-10-31

申请号：US18634671

申请日：2024-04-12

Applicant: Tokyo Electron Limited

Inventor： Masato SAKAMOTO ,  Tadahiro ISHIZAKA

IPC: H01L21/768 ,  C23C16/02 ,  C23C16/06 ,  C23C16/52 ,  H01J37/32

CPC classification number: H01L21/76862 ,  C23C16/0227 ,  C23C16/06 ,  C23C16/52 ,  H01J37/32137 ,  H01J37/32449 ,  H01J37/32568 ,  H01L21/7685 ,  H01L21/76867 ,  H01L21/76877 ,  H01J2237/335

Abstract: Provided is a substrate processing method for processing a substrate including a metal layer, the method comprising: supplying a halogen-containing gas to the substrate and reducing a metal oxide film formed on a surface of the metal layer; and supplying a reducing gas to the substrate and decreasing a residue remaining on the metal layer by supplying the halogen-containing gas.

公开(公告)号：US12131888B2

公开(公告)日：2024-10-29

申请号：US17008314

申请日：2020-08-31

Applicant: Tokyo Electron Limited

Inventor： Peter Ventzek ,  Alok Ranjan

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/67

CPC classification number: H01J37/32449 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/3244 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/67069 ,  H01J2237/334

Abstract: A method for processing a substrate includes forming a patterned layer over the substrate, the layer including an opening, where a surface of the opening includes a sidewall and a bottom wall. The method includes processing the patterned layer with an anisotropic process by generating a flux of gas clusters over the substrate in a first process chamber, where the gas clusters include radical precursors; exposing the substrate to the flux of gas clusters. The method includes sustaining plasma including ions in a second process chamber; and exposing the substrate to the ions by directing the ions toward the bottom wall of the opening.

公开(公告)号：US20240355629A1

公开(公告)日：2024-10-24

申请号：US18303283

申请日：2023-04-19

Applicant: Taiwan Semiconductor Manufacturing Company Limited

Inventor： Tzu-Ging Lin ,  Jih-Jse Lin

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/027 ,  H01L21/768 ,  H01L27/088 ,  H01L27/12 ,  H01L29/423

CPC classification number: H01L21/3065 ,  H01J37/32449 ,  H01J37/32678 ,  H01L21/027 ,  H01L21/76814 ,  H01L27/0886 ,  H01L27/1248 ,  H01L29/42312

Abstract: A semiconductor structure may be provided by: forming semiconductor fins over a semiconductor substrate; forming a gate dielectric layer and gate electrodes; forming a silicon layer over the gate electrodes; forming a dielectric mask layer including openings over the silicon layer; etching portions of the silicon layer that underlie the openings by performing a first anisotropic etch process; etching portions of the gate electrodes that underlie the openings by performing a second anisotropic etch process; and removing portions of the semiconductor fins and portions of the semiconductor substrate that underlie the openings by performing a third anisotropic etch process. At least one anisotropic etch step within the third anisotropic etch process comprises at least one low pressure etch step that is performed at a total pressure in a range from 5 mTorr to 50 mTorr.

公开(公告)号：US20240355592A1

公开(公告)日：2024-10-24

申请号：US18138629

申请日：2023-04-24

Applicant: Applied Materials, Inc.

Inventor： Vladimir Nagorny ,  Rene George

IPC: H01J37/32 ,  G06N3/084

CPC classification number: H01J37/32568 ,  G06N3/084 ,  H01J37/32348 ,  H01J37/32449 ,  H01J2237/032 ,  H01J2237/20214

Abstract: A plasma generating component for a process chamber includes a first pair of linear electrodes. Each electrode of the first pair of linear electrodes extends from a first edge of a plasma generating region of the plasma generating component to a second edge of the plasma generating region of the plasma generating component. Electrodes of the first pair of linear electrodes are substantially parallel. The plasma generating component further includes a second pair of linear electrodes, substantially parallel to the first pair of linear electrodes. The plasma generating component further includes a dielectric support to which the first pair of linear electrodes and the second pair of linear electrodes are secured.

公开(公告)号：US20240355590A1

公开(公告)日：2024-10-24

申请号：US18757613

申请日：2024-06-28

Applicant: Tokyo Electron Limited

Inventor： Takayuki KATSUNUMA ,  Masanobu HONDA

IPC: H01J37/32

CPC classification number: H01J37/32449 ,  H01J2237/3321 ,  H01J2237/3346

Abstract: A substrate processing method includes preparing a substrate. The substrate includes a first region and a second region providing an opening on the first region. The substrate processing method further includes forming a top deposit on a top of the second region by using a first plasma generated from a first gas. The substrate processing method further includes forming a first film on a surface of the top deposit and a sidewall surface defining the opening, the first film having a thickness decreasing along a depth direction of the opening.

公开(公告)号：US20240339302A1

公开(公告)日：2024-10-10

申请号：US18206456

申请日：2023-06-06

Applicant: Applied Materials, Inc.

Inventor： Yogananda Sarode Vishwanath ,  Andrew Nguyen ,  Tom K. Cho

IPC: H01J37/32 ,  B33Y80/00

CPC classification number: H01J37/32449 ,  B33Y80/00 ,  H01J2237/334

Abstract: Systems, methods, and apparatus including designs embodied in machine-readable media for a gas break used in semiconductor processing systems. The apparatus includes a gas break structure comprising an insulating material and having one or more gas flow paths formed within a body of the gas break structure, the gas break structure configured to provide a specified impedance when coupled between a grounded gas distribution manifold and an electrically charged gas delivery nozzle, the gas break structure further comprising an internal structure having a specified geometry comprising a repeating structure and one or more empty gaps between elements of the repeating structure. The gas break can be formed using additive manufacturing.

公开(公告)号：US12106948B2

公开(公告)日：2024-10-01

申请号：US17649590

申请日：2022-02-01

Applicant: Tokyo Electron Limited

Inventor： Ken Hirano ,  Hiroki Endo

IPC: H01J37/32

CPC classification number: H01J37/32981 ,  H01J37/32174 ,  H01J37/32449 ,  H01J2237/0206

Abstract: A plasma processing apparatus includes a chamber; an apparatus-side controller configured to control plasma processing in the chamber; and a monitoring unit configured to monitor a monitoring target that is disposed within the chamber, or is connected directly or indirectly to the chamber. The apparatus-side controller sets the monitoring target and a timing at which monitoring target information is to be acquired. The monitoring unit acquires the monitoring target information transmitted from the monitoring target to the apparatus-side controller, detects an occurrence of an abnormality in the chamber based on the monitoring target information, and controls the monitoring target for the chamber in which the abnormality occurs.

公开(公告)号：US12100601B2

公开(公告)日：2024-09-24

申请号：US18257751

申请日：2021-12-15

Applicant: BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD.

Inventor： Yu Zhang ,  Aki Akiba ,  Zhaocheng Liu

IPC: H01L21/311 ,  B08B5/00 ,  B08B9/00 ,  H01J37/32 ,  H01L21/3105

CPC classification number: H01L21/31144 ,  B08B5/00 ,  B08B9/00 ,  H01J37/32449 ,  H01L21/31058 ,  H01L21/31116 ,  H01J2237/334

Abstract: Embodiments of the present disclosure provide an etching method with a metal hard mask. The method is performed on a wafer surface and includes sequentially forming a metal hard mask layer and at least one functional film layer on a wafer surface in a direction away from the wafer surface. The method includes performing a plurality of etching processes on the at least one functional layer and the metal hard mask layer sequentially in a direction close to the wafer surface. An etching gas adopted by at least one etching process includes a hydrogen element and a fluorine element. A ratio of a content of the hydrogen element in the etching gas to a content of the fluorine element in the etching gas is smaller than a predetermined threshold to reduce generation of a byproduct of hydrogen fluorine.

公开(公告)号：US12098460B2

公开(公告)日：2024-09-24

申请号：US17153862

申请日：2021-01-20

Applicant: ASM IP Holding B.V.

Inventor： Eiichiro Shiba

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/52 ,  H01J37/32

CPC classification number: C23C16/4412 ,  C23C16/45561 ,  C23C16/52 ,  H01J37/32449 ,  H01J37/32816 ,  H01J37/32834 ,  H01J37/3299

Abstract: A reactor system may comprise a first gas source; a second gas source; and a reaction chamber fluidly coupled to the first and second gas sources, wherein a first gas and a second may be supplied to the reaction chamber from the first and second gas sources, respectively, to achieve stability of a reaction chamber pressure. The reactor system may further comprise an exhaust line fluidly coupled to and downstream from the reaction chamber; a vent line fluidly coupled to the first and/or second gas source, and to the exhaust line, wherein the vent line bypasses the reaction chamber; a pressure monitor coupled to the vent line configured to monitor a vent line pressure within the vent line; and/or a vent line conductance control valve coupled to the vent line and configured to adjust in response to feedback from the pressure monitor.

公开(公告)号：US20240312762A1

公开(公告)日：2024-09-19

申请号：US18608701

申请日：2024-03-18

Applicant: Matthew Steele

Inventor： Matthew Steele

IPC: H01J37/32

CPC classification number: H01J37/32055 ,  H01J37/32449 ,  H01J37/3255 ,  H01J37/32568

Abstract: A plasma generation apparatus, system, and method for processing a material is presented. The apparatus includes a housing element, a plasma reaction chamber, multiple electrode rings, and a power supply. The housing element extends cylindrically along a longitudinal axis. The plasma reaction chamber is defined by an inner surface of the housing element and is configured to generate an ionized plasma field. Multiple electrode rings are disposed within the plasma reaction chamber. Each of the electrode rings includes multiple electrodes such that the electrode rings form an arc path within the plasma reaction chamber. A power supply is coupled to the outer surface of the housing element. The power supply includes a plurality of primary coils and a secondary coil wound about the primary coils. A coil core is in contact with at least a portion of each of the primary coils.