Monolithic voltage reference device with internal, multi-temperature drift data and related testing procedures
    1.
    发明授权
    Monolithic voltage reference device with internal, multi-temperature drift data and related testing procedures 有权
    具有内部,多温度漂移数据和相关测试程序的单片电压参考装置

    公开(公告)号:US07920016B2

    公开(公告)日:2011-04-05

    申请号:US12475184

    申请日:2009-05-29

    IPC分类号: H01L35/00

    摘要: A testing procedure may determine whether a monolithic voltage reference device meets a temperature drift specification. A first non-room temperature output voltage of the monolithic voltage reference device may be measured while the monolithic voltage reference device is at a first non-room temperature which is substantially different than room temperature. First non-room temperature information may be stored in a memory within the monolithic voltage reference device which is a function of the first non-room temperature output voltage. A second non-room temperature output voltage of the monolithic voltage reference device may be measured while the monolithic voltage reference device is at a second non-room temperature which is substantially different than the room temperature and the first non-room temperature. Second non-room temperature information may be stored in the memory without destroying the first non-room temperature information which is a function of the second non-room temperature output voltage. A determination may be made whether the monolithic voltage reference device meets the temperature drift specification based on a computation that is a function of both the first non-room temperature information and the second non-room temperature information.

    摘要翻译: 测试程序可以确定单片电压参考装置是否满足温度漂移规范。 单片电压参考装置的第一非室温输出电压可以被测量,而单片电压参考装置处于与室温基本不同的第一非室温。 第一非室温信息可以存储在作为第一非室温输出电压的函数的单片电压参考装置内的存储器中。 单片电压参考装置的第二非室温输出电压可以被测量,而单片电压参考装置处于与室温和第一非室温基本上不同的第二非室温。 可以将第二非室温信息存储在存储器中,而不破坏作为第二非室温输出电压的函数的第一非室温信息。 可以基于作为第一非室内温度信息和第二非室内温度信息的函数的计算来确定单片电压参考装置是否满足温度漂移规格。

    MONOLITHIC VOLTAGE REFERENCE DEVICE WITH INTERNAL, MULTI-TEMPERATURE DRIFT DATA AND RELATED TESTING PROCEDURES
    2.
    发明申请
    MONOLITHIC VOLTAGE REFERENCE DEVICE WITH INTERNAL, MULTI-TEMPERATURE DRIFT DATA AND RELATED TESTING PROCEDURES 有权
    具有内部,多温度数据和相关测试程序的单片电压参考设备

    公开(公告)号:US20100301923A1

    公开(公告)日:2010-12-02

    申请号:US12475184

    申请日:2009-05-29

    IPC分类号: G01R19/00 H01L35/00

    摘要: A testing procedure may determine whether a monolithic voltage reference device meets a temperature drift specification. A first non-room temperature output voltage of the monolithic voltage reference device may be measured while the monolithic voltage reference device is at a first non-room temperature which is substantially different than room temperature. First non-room temperature information may be stored in a memory within the monolithic voltage reference device which is a function of the first non-room temperature output voltage. A second non-room temperature output voltage of the monolithic voltage reference device may be measured while the monolithic voltage reference device is at a second non-room temperature which is substantially different than the room temperature and the first non-room temperature. Second non-room temperature information may be stored in the memory without destroying the first non-room temperature information which is a function of the second non-room temperature output voltage. A determination may be made whether the monolithic voltage reference device meets the temperature drift specification based on a computation that is a function of both the first non-room temperature information and the second non-room temperature information.

    摘要翻译: 测试程序可以确定单片电压参考装置是否满足温度漂移规范。 单片电压参考装置的第一非室温输出电压可以被测量,而单片电压参考装置处于与室温基本不同的第一非室温。 第一非室温信息可以存储在作为第一非室温输出电压的函数的单片电压参考装置内的存储器中。 单片电压参考装置的第二非室温输出电压可以被测量,而单片电压参考装置处于与室温和第一非室温基本上不同的第二非室温。 可以将第二非室温信息存储在存储器中,而不破坏作为第二非室温输出电压的函数的第一非室温信息。 可以基于作为第一非室内温度信息和第二非室内温度信息的函数的计算来确定单片电压参考装置是否满足温度漂移规格。