公开(公告)号：US4864544A

公开(公告)日：1989-09-05

申请号：US272563

申请日：1988-11-17

申请人： Michael E. Spak ,  Craig S. Tyl ,  Philip C. Wottrich

发明人： Michael E. Spak ,  Craig S. Tyl ,  Philip C. Wottrich

IPC分类号： G06F7/78 ,  G11C11/412 ,  G11C19/00 ,  G11C19/28

CPC分类号： G06F7/78 ,  G11C11/412 ,  G11C19/00 ,  G11C19/28

摘要： A memory cell is comprised of a cross-coupled master latch and a cross-coupled slave latch. The memory cell includes means for switching on and off power supplies connected to the master latch and the slave latch so as to control the direction of shift in a bidirectional shift. Data is shifted in a first direction when the power supply connected to the master latch is switched off, and data is shifted in a second direction when the power supply connected to the slave latch is switched off.

摘要翻译： 存储器单元由交叉耦合主锁存器和交叉耦合从锁存器组成。 存储单元包括用于接通和断开连接到主锁存器和从锁存器的电源的装置，以便控制双向移位中的移位方向。 当连接到主​​锁存器的电源被关闭时，数据沿着第一方向移位，并且当连接到从锁存器的电源被关闭时，数据沿第二方向移位。

公开(公告)号：US4813015A

公开(公告)日：1989-03-14

申请号：US838993

申请日：1986-03-12

申请人： Michael E. Spak ,  Craig S. Tyl ,  Philip C. Wottrich

发明人： Michael E. Spak ,  Craig S. Tyl ,  Philip C. Wottrich

IPC分类号： G11C7/00 ,  G06F7/78 ,  G11C11/412 ,  G11C19/00 ,  G11C19/28 ,  G11C8/00

CPC分类号： G06F7/78 ,  G11C11/412 ,  G11C19/00 ,  G11C19/28

摘要： A fracturable x-y random access memory array for performing pushing and popping of data and fracturing the array simultaneously at a common address includes a row fracture circuit responsive to row addresses to fracture the array in the Y-direction and a column fracture circuit responsive to column addresses for fracturing the array in the X-direction. A plurality of memory cells are stacked in a plurality of columns to form an x-y organization which can be randomly accessed in response to the row and column addresses. The memory cells are responsive to a shift control driver circuit for bidirectional shifting of data by either pushing data into or popping data from at any point within one of the plurality of randomly addressable column at the same row and column addresses used to fracture the array defining a fracture point. Data in all of the memory cells in the array with addresses higher (or lower) than the fracture point shift and the memory cells with addresses lower (or higher) than the fracture point maintain their data unchanged.

摘要翻译： 用于执行数据的推动和弹出并且以公共地址同时压裂阵列的可分裂的xy随机存取存储器阵列包括响应于行地址的行断裂电路来使阵列在Y方向上断裂，以及响应于列地址的列断裂电路 用于在X方向上压裂阵列。 多个存储器单元被堆叠在多个列中以形成可以响应于行和列地址而被随机访问的x-y组织。 存储器单元响应于移位控制驱动器电路，用于通过将数据从与多个可随机寻址列中的一个内的任何点处的数据推入或弹出数据进行双向移位，所述相同行和列地址用于破坏定义的数组 骨折点。 阵列中的所有存储单元中的数据，其地址比断裂点位移更高（或更低），并且具有比断裂点更低（或更高）的地址的存储单元保持其数据不变。