Method and apparatus for monitoring polishing pad wear during processing
    2.
    发明授权
    Method and apparatus for monitoring polishing pad wear during processing 失效
    用于在加工期间监测抛光垫磨损的方法和装置

    公开(公告)号:US06186864B1

    公开(公告)日:2001-02-13

    申请号:US09391130

    申请日:1999-09-07

    IPC分类号: B24B4900

    CPC分类号: B24B49/183 B24B37/005

    摘要: In a chemical-mechanical polishing (CMP) process, semiconductor substrates are rotated against a polishing pad in order to planarize substrate layers. The condition of the polishing pad directly affects the polishing rate of material removal and uniformity of removal from the semiconductor wafer. Conditioning of the polishing pad surface with an abrasive improves polishing uniformity and rates, however, it has the detrimental affect of removing a quantity of pad material. A method and apparatus for monitoring polishing pad wear during processing is developed to extend the pad's useful life, and maintain pad uniformity. This is accomplished in the present invention by measuring and monitoring the diminished pad thickness using a non-intrusive measurement system, and creating a closed-loop system for adjusting the chemical-mechanical polishing tool process parameters. The non-intrusive measurement system consists of an interferometer measurement technique utilizing ultrasound or electromagnetic radiation transmitters and receivers aligned to cover any portion of the radial length of a polishing pad surface. The measurement system is sensitive to relative changes in pad thickness for uniformity, and to abrupt changes such as detecting wafer detachment from the CMP wafer carrier.

    摘要翻译: 在化学机械抛光(CMP)工艺中,半导体衬底相对于抛光垫旋转以平坦化衬底层。 抛光垫的状态直接影响材料去除的抛光速率和从半导体晶片去除的均匀性。 用研磨剂调理抛光垫表面可以提高抛光均匀性和速率,但是对去除一定量的垫材料有不利影响。 开发了用于在处理期间监测抛光垫磨损的方法和装置,以延长垫的使用寿命并保持垫的均匀性。 这在本发明中通过使用非侵入式测量系统测量和监测减小的垫厚度并创建用于调节化学机械抛光工具工艺参数的闭环系统来实现。 非侵入式测量系统由干涉仪测量技术组成,其利用超声波或电磁辐射发射器和接收器对准以覆盖抛光垫表面的径向长度的任何部分。 测量系统对于均匀性的焊盘厚度的相对变化以及诸如检测从CMP晶片载体的晶片脱离的突然变化敏感。

    Method and apparatus of monitoring polishing pad wear during processing
    3.
    发明授权
    Method and apparatus of monitoring polishing pad wear during processing 失效
    在加工过程中监测抛光垫磨损的方法和装置

    公开(公告)号:US6045434A

    公开(公告)日:2000-04-04

    申请号:US969148

    申请日:1997-11-10

    IPC分类号: B24B37/005 B24B49/00

    CPC分类号: B24B49/183 B24B37/005

    摘要: A method and apparatus for monitoring polishing pad wear during processing is developed to extend the pad's useful life, and maintain pad uniformity. This is accomplished in the present invention by measuring and monitoring the diminished pad thickness using a non-intrusive measurement system, and creating a closed-loop system for adjusting the chemical-mechanical polishing tool process parameters. The non-intrusive measurement system consists of an interferometer measurement technique utilizing ultrasound or electromagnetic radiation transmitters and receivers aligned to cover any portion of the radial length of a polishing pad surface. The measurement system is sensitive to relative changes in pad thickness for uniformity, and to abrupt changes such as detecting wafer detachment from the CMP wafer carrier.

    摘要翻译: 开发了用于在处理期间监测抛光垫磨损的方法和装置,以延长垫的使用寿命并保持垫的均匀性。 这在本发明中通过使用非侵入式测量系统测量和监测减小的垫厚度并创建用于调整化学机械抛光工具工艺参数的闭环系统来实现。 非侵入式测量系统由干涉仪测量技术组成,其利用超声波或电磁辐射发射器和接收器对准以覆盖抛光垫表面的径向长度的任何部分。 测量系统对于均匀性的焊盘厚度的相对变化以及诸如检测从CMP晶片载体的晶片脱离的突然变化敏感。