SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD

    公开(公告)号:US20180277399A1

    公开(公告)日:2018-09-27

    申请号:US15901955

    申请日:2018-02-22

    IPC分类号: H01L21/67 H01L21/306

    摘要: A substrate processing apparatus includes a processing liquid distributing member that partitions, by an inner wall surface, at least part of a processing liquid distribution passage communicating with a discharge port, a processing liquid supplying unit that supplies the high-temperature processing liquid having a higher temperature than a room temperature to the processing liquid distribution passage, a temperature changing unit arranged to heat or cool an outer wall surface of the processing liquid distributing member from the outside to change a temperature of the processing liquid distributing member, and a controller that executes an equilibrium temperature maintaining step of maintaining the inner wall surface of the processing liquid distributing member at a thermal equilibrium temperature by controlling the temperature changing unit in a state where no processing liquid is supplied from the processing liquid supplying unit to the processing liquid distribution passage.

    Substrate processing apparatus and substrate processing method

    公开(公告)号:US10062593B2

    公开(公告)日:2018-08-28

    申请号:US14753063

    申请日:2015-06-29

    发明人: Joji Kuwahara

    摘要: During a teaching operation regarding a transport mechanism, a hand of the transport mechanism is moved to a tentative target position in a substrate supporter, and a substrate supported at a reference position in the substrate supporter is received by the hand. A positional relationship between the substrate held by the hand and the hand is detected. A deviation between the tentative target position and the reference position is acquired as correction information based on the detected positional relationship. During the teaching operation or during substrate processing, the tentative target position is corrected to a true target position to coincide with the reference position based on the acquired correction information. During the substrate processing, the hand is moved to the true target position, so that the substrate is transferred to the substrate supporter by the hand, or the substrate is received from the substrate supporter by the hand.

    SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD

    公开(公告)号:US20180211859A1

    公开(公告)日:2018-07-26

    申请号:US15928786

    申请日:2018-03-22

    发明人: Joji KUWAHARA

    摘要: During a teaching operation regarding a transport mechanism, a hand of the transport mechanism is moved to a tentative target position in a substrate supporter, and a substrate supported at a reference position in the substrate supporter is received by the hand. A positional relationship between the substrate held by the hand and the hand is detected. A deviation between the tentative target position and the reference position is acquired as correction information based on the detected positional relationship. During the teaching operation or during substrate processing, the tentative target position is corrected to a true target position to coincide with the reference position based on the acquired correction information. During the substrate processing, the hand is moved to the true target position, so that the substrate is transferred to the substrate supporter by the hand, or the substrate is received from the substrate supporter by the hand.

    SUBSTRATE PROCESSING METHOD
    8.
    发明申请

    公开(公告)号:US20180207685A1

    公开(公告)日:2018-07-26

    申请号:US15925327

    申请日:2018-03-19

    摘要: A substrate processing method includes a substrate holding step of holding a substrate horizontally, a liquid droplet discharging step wherein liquid droplets of an organic solvent, formed by mixing the organic solvent and a gas, are discharged from a double-fluid nozzle toward a predetermined discharge region within an upper surface of the substrate, and a liquid film forming step, executed before the liquid droplet discharging step, of supplying the organic solvent to the double fluid nozzle without supplying the gas, so as to discharge the organic solvent in a continuous stream mode from the double-fluid nozzle to form a liquid film of the organic solvent covering the discharge region on the upper surface of the substrate.

    SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS

    公开(公告)号:US20180195178A1

    公开(公告)日:2018-07-12

    申请号:US15841999

    申请日:2017-12-14

    发明人: Masayuki OTSUJI

    IPC分类号: C23F1/02 H01L21/02

    摘要: In a substrate processing method, a liquid film 30 of a processing liquid is formed on an upper surface of a substrate W, a gas which comprising vapor of a low surface tension liquid is sprayed to the liquid film 30 to form a liquid film-removed region 31. The liquid film-removed region 31 is expanded. A coolant 29 is supplied to a lower surface of the substrate W, while the liquid film 30 is cooled to a temperature lower than the boiling point of the low surface tension liquid, a heated gas is sprayed to selectively remove the coolant 29, and a range 33 in which the coolant 29 is removed is heated by a heated gas, by which the liquid film-removed region 31 on the upper surface of the substrate W is selectively heated to a temperature not less than the boiling point of the low surface tension liquid, and also a range which heats the liquid film-removed region 31 is expanded in synchronization with expansion of the liquid film-removed region 31.

    Method for collapse-free drying of high aspect ratio structures

    公开(公告)号:US10008396B2

    公开(公告)日:2018-06-26

    申请号:US14730457

    申请日:2015-06-04

    IPC分类号: F26B3/34 H01L21/67 H01L21/02

    摘要: A method for drying a substrate including a plurality of high aspect ratio (HAR) structures includes, after at least one of (i) wet etching, and (ii) wet cleaning, and (iii) wet rinsing the substrate using at least one of (a) wet etching solution, and (b) wet cleaning solution, and (c) wet rinsing solution, respectively, and without drying the substrate: depositing, between the plurality of HAR structures, a solution that includes a polymer component, a nanoparticle component, and a solvent; wherein as the solvent evaporates, a sacrificial bracing material precipitates out of solution and at least partially fills the plurality of HAR structures, the sacrificial bracing material including (i) polymer material from the polymer component of the solution and (ii) nanoparticle material from the nanoparticle component of the solution; and exposing the substrate to plasma generated using a plasma gas chemistry to volatilize the sacrificial bracing material.