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公开(公告)号:US20190096737A1
公开(公告)日:2019-03-28
申请号:US16080763
申请日:2017-02-27
发明人: Hiroshi ABE , Toyohide HAYASHI , Kenji KOBAYASHI
IPC分类号: H01L21/687 , H01L21/67 , H01L21/304
CPC分类号: H01L21/68764 , H01L21/304 , H01L21/67017 , H01L21/67028 , H01L21/67051 , H01L21/67103 , H01L21/67115 , H01L21/6715 , H01L21/67248 , H01L21/68728 , H01L21/68792
摘要: A substrate processing apparatus includes a spin base on which a chuck member that holds a peripheral edge of a substrate is disposed, a motor which rotates the spin base, a heater unit which is positioned between the substrate held by the chuck member and an upper surface of the spin base, a processing liquid supply unit which supplies a processing liquid toward a surface of the substrate held by the chuck member, and a microwave generating unit which generates microwaves to a lower surface of the substrate from the heater unit. The microwave generating unit may include a microwave generating member which includes a waveguide disposed in the heater unit, microwave oscillator which is disposed outside the heater unit and a coaxial cable which connects the waveguide to the microwave oscillator.
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公开(公告)号:US20180330940A1
公开(公告)日:2018-11-15
申请号:US16036828
申请日:2018-07-16
发明人: Lutz Rebstock
IPC分类号: H01L21/02 , H01L21/687 , H01L21/677 , H01L21/67 , B08B3/12 , H01L21/673 , B08B3/08
CPC分类号: H01L21/02041 , B08B3/08 , B08B3/12 , H01L21/67017 , H01L21/67028 , H01L21/67051 , H01L21/67173 , H01L21/67207 , H01L21/67359 , H01L21/67745 , H01L21/68707 , Y10S294/902
摘要: In an embodiment, the present invention discloses a EUV cleaner system and process for cleaning a EUV carrier. The euv cleaner system comprises separate dirty and cleaned environments, separate cleaning chambers for different components of the double container carrier, gripper arms for picking and placing different components using a same robot handler, gripper arms for picking and placing different components using a same robot handler, gripper arms for holding different components at different locations, horizontal spin cleaning and drying for outer container, hot water and hot air (70 C) cleaning process, vertical nozzles and rasterizing megasonic nozzles for cleaning inner container with hot air nozzles for drying, separate vacuum decontamination chambers for outgassing different components, for example, one for inner and one for outer container with high vacuum (e.g.,
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公开(公告)号:US20180277399A1
公开(公告)日:2018-09-27
申请号:US15901955
申请日:2018-02-22
发明人: Koji HASHIMOTO , Naoyuki OSADA
IPC分类号: H01L21/67 , H01L21/306
CPC分类号: H01L21/6708 , H01L21/30604 , H01L21/67017 , H01L21/67028 , H01L21/67103 , H01L21/67109 , H01L21/67167 , H01L21/67248
摘要: A substrate processing apparatus includes a processing liquid distributing member that partitions, by an inner wall surface, at least part of a processing liquid distribution passage communicating with a discharge port, a processing liquid supplying unit that supplies the high-temperature processing liquid having a higher temperature than a room temperature to the processing liquid distribution passage, a temperature changing unit arranged to heat or cool an outer wall surface of the processing liquid distributing member from the outside to change a temperature of the processing liquid distributing member, and a controller that executes an equilibrium temperature maintaining step of maintaining the inner wall surface of the processing liquid distributing member at a thermal equilibrium temperature by controlling the temperature changing unit in a state where no processing liquid is supplied from the processing liquid supplying unit to the processing liquid distribution passage.
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公开(公告)号:US20180247835A1
公开(公告)日:2018-08-30
申请号:US15769367
申请日:2016-10-20
发明人: SOO YEON LEE , HO-YOUNG KIM , SEUNGHO KIM , JAE HONG LEE , JOONOH KIM , JINKYU KIM , BYUNG MAN KANG , IN IL JUNG
CPC分类号: H01L21/67028 , B08B5/02 , B08B2203/0229 , H01L21/02041 , H01L21/02046 , H01L21/02057 , H01L21/67017 , H01L21/67051 , H01L21/67173 , H01L21/68735 , H01L21/68785
摘要: The present invention provides a substrate treating apparatus. The substrate treating apparatus includes a chamber configured to provide a space for processing a substrate, a support unit provided in the chamber and configured to support the substrate, and a nozzle configured to supply a cleaning medium to the substrate supported by the support unit, the nozzle may include a contraction part which has an inlet, through which the cleaning medium is introduced, and a cross-sectional area of which decreases as it goes far from the inlet, an expansion part which has an ejection hole, through which the cleaning medium is ejected, and a cross-sectional area of which increases as it becomes closer to the ejection hole, and an orifice located between the contraction part and the expansion part, and the cleaning medium introduced into the contraction part is a single gas.
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公开(公告)号:US10062593B2
公开(公告)日:2018-08-28
申请号:US14753063
申请日:2015-06-29
发明人: Joji Kuwahara
IPC分类号: G06F7/00 , G06F19/00 , H01L21/677 , H01L21/67 , H01L21/68 , H01L21/683 , H01L21/687
CPC分类号: H01L21/67742 , H01L21/67028 , H01L21/67253 , H01L21/67778 , H01L21/681 , H01L21/6838 , H01L21/68728
摘要: During a teaching operation regarding a transport mechanism, a hand of the transport mechanism is moved to a tentative target position in a substrate supporter, and a substrate supported at a reference position in the substrate supporter is received by the hand. A positional relationship between the substrate held by the hand and the hand is detected. A deviation between the tentative target position and the reference position is acquired as correction information based on the detected positional relationship. During the teaching operation or during substrate processing, the tentative target position is corrected to a true target position to coincide with the reference position based on the acquired correction information. During the substrate processing, the hand is moved to the true target position, so that the substrate is transferred to the substrate supporter by the hand, or the substrate is received from the substrate supporter by the hand.
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公开(公告)号:US20180240648A1
公开(公告)日:2018-08-23
申请号:US15411892
申请日:2017-01-20
发明人: Xiaowei Wu , David Fenwick , Jennifer Y. Sun , Guodong Zhan
IPC分类号: H01J37/32 , C23C16/455 , C23C16/50 , C23C16/40
CPC分类号: H01J37/32495 , C23C16/045 , C23C16/06 , C23C16/403 , C23C16/405 , C23C16/4404 , C23C16/45527 , C23C16/45529 , C23C16/45531 , C23C16/45544 , C23C16/45565 , C23C16/50 , H01J37/3244 , H01J2237/3321 , H01J2237/334 , H01J2237/335 , H01L21/67028 , H01L21/67069
摘要: Described herein are articles, systems and methods where a plasma resistant coating is deposited onto a surface of a chamber component using an atomic layer deposition (ALD) process. The plasma resistant coating has a stress relief layer and a rare earth metal-containing oxide layer and uniformly covers features, such as those having an aspect ratio of about 3:1 to about 300:1.
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公开(公告)号:US20180211859A1
公开(公告)日:2018-07-26
申请号:US15928786
申请日:2018-03-22
发明人: Joji KUWAHARA
IPC分类号: H01L21/677 , H01L21/687 , H01L21/683 , H01L21/68 , H01L21/67
CPC分类号: H01L21/67742 , H01L21/67028 , H01L21/67253 , H01L21/67778 , H01L21/681 , H01L21/6838 , H01L21/68728
摘要: During a teaching operation regarding a transport mechanism, a hand of the transport mechanism is moved to a tentative target position in a substrate supporter, and a substrate supported at a reference position in the substrate supporter is received by the hand. A positional relationship between the substrate held by the hand and the hand is detected. A deviation between the tentative target position and the reference position is acquired as correction information based on the detected positional relationship. During the teaching operation or during substrate processing, the tentative target position is corrected to a true target position to coincide with the reference position based on the acquired correction information. During the substrate processing, the hand is moved to the true target position, so that the substrate is transferred to the substrate supporter by the hand, or the substrate is received from the substrate supporter by the hand.
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公开(公告)号:US20180207685A1
公开(公告)日:2018-07-26
申请号:US15925327
申请日:2018-03-19
发明人: Atsuyasu MIURA , Naoki SAWAZAKI
CPC分类号: H01L21/67028 , H01L21/02065 , H01L21/67051
摘要: A substrate processing method includes a substrate holding step of holding a substrate horizontally, a liquid droplet discharging step wherein liquid droplets of an organic solvent, formed by mixing the organic solvent and a gas, are discharged from a double-fluid nozzle toward a predetermined discharge region within an upper surface of the substrate, and a liquid film forming step, executed before the liquid droplet discharging step, of supplying the organic solvent to the double fluid nozzle without supplying the gas, so as to discharge the organic solvent in a continuous stream mode from the double-fluid nozzle to form a liquid film of the organic solvent covering the discharge region on the upper surface of the substrate.
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公开(公告)号:US20180195178A1
公开(公告)日:2018-07-12
申请号:US15841999
申请日:2017-12-14
发明人: Masayuki OTSUJI
CPC分类号: C23F1/02 , H01L21/02019 , H01L21/02057 , H01L21/67028 , H01L21/6708 , H01L21/67109 , H01L21/67248 , H01L21/68792
摘要: In a substrate processing method, a liquid film 30 of a processing liquid is formed on an upper surface of a substrate W, a gas which comprising vapor of a low surface tension liquid is sprayed to the liquid film 30 to form a liquid film-removed region 31. The liquid film-removed region 31 is expanded. A coolant 29 is supplied to a lower surface of the substrate W, while the liquid film 30 is cooled to a temperature lower than the boiling point of the low surface tension liquid, a heated gas is sprayed to selectively remove the coolant 29, and a range 33 in which the coolant 29 is removed is heated by a heated gas, by which the liquid film-removed region 31 on the upper surface of the substrate W is selectively heated to a temperature not less than the boiling point of the low surface tension liquid, and also a range which heats the liquid film-removed region 31 is expanded in synchronization with expansion of the liquid film-removed region 31.
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公开(公告)号:US10008396B2
公开(公告)日:2018-06-26
申请号:US14730457
申请日:2015-06-04
发明人: Stephen Sirard , Ratchana Limary
CPC分类号: H01L21/67034 , H01L21/02057 , H01L21/67028
摘要: A method for drying a substrate including a plurality of high aspect ratio (HAR) structures includes, after at least one of (i) wet etching, and (ii) wet cleaning, and (iii) wet rinsing the substrate using at least one of (a) wet etching solution, and (b) wet cleaning solution, and (c) wet rinsing solution, respectively, and without drying the substrate: depositing, between the plurality of HAR structures, a solution that includes a polymer component, a nanoparticle component, and a solvent; wherein as the solvent evaporates, a sacrificial bracing material precipitates out of solution and at least partially fills the plurality of HAR structures, the sacrificial bracing material including (i) polymer material from the polymer component of the solution and (ii) nanoparticle material from the nanoparticle component of the solution; and exposing the substrate to plasma generated using a plasma gas chemistry to volatilize the sacrificial bracing material.
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