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公开(公告)号：US07033739B2
公开(公告)日：2006-04-25
申请号：US10423466
申请日：2003-04-24
IPC分类号： G03F7/20
摘要： In an implementation, energy reaching the lower surface of a photoresist may be redirected back into the photoresist material. This may be done by, for example, reflecting and/or fluorescing the energy from a hardmask provided on the wafer surface back into the photoresist.
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公开(公告)号：US07527920B2
公开(公告)日：2009-05-05
申请号：US11293594
申请日：2005-12-02
IPC分类号： G03F7/20
摘要： In an implementation, energy reaching the lower surface of a photoresist may be redirected back into the photoresist material. This may be done by, for example, reflecting and/or fluorescing the energy from a hardmask provided on the wafer surface back into the photoresist.
摘要翻译： 在一个实现中，到达光致抗蚀剂的下表面的能量可以被重定向回到光致抗蚀剂材料中。 这可以通过例如将设置在晶片表面上的硬掩模的能量反射和/或发射到光致抗蚀剂中来完成。
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公开(公告)号：US20060093972A1
公开(公告)日：2006-05-04
申请号：US11293594
申请日：2005-12-02
申请人： Michael Goldstein , Manish Chandhok , Eric Panning , Robert Bristol , Bryan Rice
发明人： Michael Goldstein , Manish Chandhok , Eric Panning , Robert Bristol , Bryan Rice
IPC分类号： G03F7/00
摘要： In an implementation, energy reaching the lower surface of a photoresist may be redirected back into the photoresist material. This may be done by, for example, reflecting and/or fluorescing the energy from a hardmask provided on the wafer surface back into the photoresist.
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公开(公告)号：US07109504B2
公开(公告)日：2006-09-19
申请号：US10882784
申请日：2004-06-30
申请人： Manish Chandhok , Eric Panning , Bryan J. Rice
发明人： Manish Chandhok , Eric Panning , Bryan J. Rice
IPC分类号： H01J35/00
CPC分类号： G03F7/70916 , B82Y10/00 , G03F7/70033
摘要： According to a first embodiment of the invention, a dual cathode electrode for generating EUV light is disclosed. The dual cathode electrode may include a first outer cathode, a second inner cathode, and an anode disposed between the inner and outer cathodes. The dual cathode electrode also includes a plasma disposed in between the cathodes that emits EUV photons when it is excited by an arc between the anode and the cathodes. According to a second embodiment of the invention, several Dense Plasma Focus (DPF) electrodes are placed along a circle. The DPF electrodes, when activated, will emit electron photons from the circle in which they are placed thereby avoiding obscuration used to protect UV mirrors against debris.
摘要翻译： 根据本发明的第一实施例，公开了一种用于产生EUV光的双阴极电极。 双阴极可以包括第一外阴极，第二内阴极和设置在内阴极和外阴极之间的阳极。 双阴极还包括设置在阴极之间的等离子体，其在由阳极和阴极之间的电弧激发时发射EUV光子。 根据本发明的第二实施例，几个密集等离子体聚焦（DPF）电极沿着圆放置。 DPF电极在被激活时将从放置它们的圆中发射电子光子，从而避免用于保护UV镜免受碎片的遮蔽。
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公开(公告)号：US07078700B2
公开(公告)日：2006-07-18
申请号：US10883048
申请日：2004-06-30
申请人： Manish Chandhok , Bryan J. Rice , Robert Bristol
发明人： Manish Chandhok , Bryan J. Rice , Robert Bristol
CPC分类号： G03F7/70175 , G03F7/70033 , G21K1/06
摘要： According to an embodiment of the invention, extreme ultraviolet (EUV) photolithography is performed using lobster eye transmission optics. A light source, such as a source plasma, is located at the center of a circle. Several mirror segments are arranged on an arc of the circle. The mirror segments may be arranged so that the light generated by the light source is collimated after being reflected. The light source may be a source plasma capable of generating EUV photons.
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公开(公告)号：US07098466B2
公开(公告)日：2006-08-29
申请号：US10883297
申请日：2004-06-30
申请人： Manish Chandhok , Eric M. Panning , Bryan J. Rice
发明人： Manish Chandhok , Eric M. Panning , Bryan J. Rice
IPC分类号： G01B9/02
CPC分类号： B82Y10/00 , G03F7/70033 , G03F7/70175 , G03F7/70583
摘要： According to an embodiment of the invention, an adjustable EUV light source may be used for photolithography. The EUV light source, such as an electrode, is mounted in an adjustable housing. The housing can be adjusted to change the distance between the light source and focusing mirrors, which in turn changes the partial coherence value of the system. The partial coherence value can be changed to print different types of semiconductor features.
摘要翻译： 根据本发明的实施例，可调节的EUV光源可用于光刻。 EUV光源，例如电极，安装在可调整的外壳中。 可以调整外壳以改变光源和聚焦镜之间的距离，这又改变了系统的部分相干值。 可以改变部分相干值以打印不同类型的半导体特征。
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公开(公告)号：US20060002113A1
公开(公告)日：2006-01-05
申请号：US10883297
申请日：2004-06-30
申请人： Manish Chandhok , Eric Panning , Bryan Rice
发明人： Manish Chandhok , Eric Panning , Bryan Rice
IPC分类号： F21S6/00
CPC分类号： B82Y10/00 , G03F7/70033 , G03F7/70175 , G03F7/70583
摘要： According to an embodiment of the invention, an adjustable EUV light source may be used for photolithography. The EUV light source, such as an electrode, is mounted in an adjustable housing. The housing can be adjusted to change the distance between the light source and focusing mirrors, which in turn changes the partial coherence value of the system. The partial coherence value can be changed to print different types of semiconductor features.
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8.发明授权Adjustment of distance between source plasma and mirrors to change partial coherence 失效调整源等离子体和反射镜之间的距离以改变部分相干性公开(公告)号：US07208747B2
公开(公告)日：2007-04-24
申请号：US11433412
申请日：2006-05-12
申请人： Manish Chandhok , Eric M. Panning , Bryan J. Rice
发明人： Manish Chandhok , Eric M. Panning , Bryan J. Rice
IPC分类号： G01B9/02
CPC分类号： B82Y10/00 , G03F7/70033 , G03F7/70175 , G03F7/70583
摘要： According to an embodiment of the invention, an adjustable EUV light source may be used for photolithography. The EUV light source, such as an electrode, is mounted in an adjustable housing. The housing can be adjusted to change the distance between the light source and focusing mirrors, which in turn changes the partial coherence value of the system. The partial coherence value can be changed to print different types of semiconductor features.
摘要翻译： 根据本发明的实施例，可调节的EUV光源可用于光刻。 EUV光源，例如电极，安装在可调整的外壳中。 可以调整外壳以改变光源和聚焦镜之间的距离，这又改变了系统的部分相干值。 可以改变部分相干值以打印不同类型的半导体特征。
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公开(公告)号：US20060017024A1
公开(公告)日：2006-01-26
申请号：US10882784
申请日：2004-06-30
申请人： Manish Chandhok , Eric Panning , Bryan Rice
发明人： Manish Chandhok , Eric Panning , Bryan Rice
IPC分类号： G01J3/10
CPC分类号： G03F7/70916 , B82Y10/00 , G03F7/70033
摘要： According to a first embodiment of the invention, a dual cathode electrode for generating EUV light is disclosed. The dual cathode electrode may include a first outer cathode, a second inner cathode, and an anode disposed between the inner and outer cathodes. The dual cathode electrode also includes a plasma disposed in between the cathodes that emits EUV photons when it is excited by an arc between the anode and the cathodes. According to a second embodiment of the invention, several Dense Plasma Focus (DPF) electrodes are placed along a circle. The DPF electrodes, when activated, will emit electron photons from the circle in which they are placed thereby avoiding obscuration used to protect UV mirrors against debris.
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10.发明申请Adjustment of distance between source plasma and mirrors to change partial coherence 失效调整源等离子体和反射镜之间的距离以改变部分相干性公开(公告)号：US20060289810A1
公开(公告)日：2006-12-28
申请号：US11433412
申请日：2006-05-12
申请人： Manish Chandhok , Eric Panning , Bryan Rice
发明人： Manish Chandhok , Eric Panning , Bryan Rice
IPC分类号： G01J3/10
CPC分类号： B82Y10/00 , G03F7/70033 , G03F7/70175 , G03F7/70583
摘要： According to an embodiment of the invention, an adjustable EUV light source may be used for photolithography. The EUV light source, such as an electrode, is mounted in an adjustable housing. The housing can be adjusted to change the distance between the light source and focusing mirrors, which in turn changes the partial coherence value of the system. The partial coherence value can be changed to print different types of semiconductor features.
摘要翻译： 根据本发明的实施例，可调节的EUV光源可用于光刻。 EUV光源，例如电极，安装在可调整的外壳中。 可以调整外壳以改变光源和聚焦镜之间的距离，这又改变了系统的部分相干值。 可以改变部分相干值以打印不同类型的半导体特征。
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