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公开(公告)号：US11829082B2
公开(公告)日：2023-11-28
申请号：US17693703
申请日：2022-03-14
Inventor： Shang-Ying Wu , Shang-Chieh Chien , Bo-Tsun Liu , Li-Jui Chen , Po-Chung Cheng
CPC classification number: G03F7/70925 , G03F7/70025 , G03F7/70033 , G03F7/70175 , H05G2/008
Abstract: A method for a lithography exposure process is provided. The method includes irradiating a target droplet with a laser beam to create an extreme ultraviolet (EUV) light. The method further includes reflecting the EUV light with a collector. The method also includes discharging a cleaning gas over the collector through a gas distributor positioned next to the collector. A portion of the cleaning gas is converted to free radicals before the cleaning gas leaves the gas distributor, and the free radicals are discharged over the collector along with the cleaning gas.
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公开(公告)号：US20230266673A1
公开(公告)日：2023-08-24
申请号：US18309809
申请日：2023-04-30
Applicant: Carl Zeiss SMT GmbH
Inventor： Vitaliy SHKLOVER
IPC: G03F7/20
CPC classification number: G03F7/70175 , G03F7/70158 , G03F7/702
Abstract: A reflective optical element (17), in particular for reflecting EUV radiation (16), includes: a substrate (25), and a reflective coating (26) applied to the substrate (25). In one disclosed aspect, the substrate (25) is doped within its volume (V) with at least one precious metal (27). In a further disclosed aspect, the reflective coating (26) and/or a structured layer (28) that is formed between the substrate (25) and the reflective coating (26) is doped with at least one precious metal (27). Also disclosed are an optical arrangement, preferably a projection exposure apparatus for microlithography, in particular for EUV lithography, which includes at least one such reflective optical element (17), and a method of producing such a reflective optical element (17).
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3.发明申请公开(公告)号：US20190146350A1
公开(公告)日：2019-05-16
申请号：US16247094
申请日：2019-01-14
Applicant: ASML Netherlands B.V.
Inventor： Christian Felix WäHLISCH
CPC classification number: G03F7/70033 , G03F7/70058 , G03F7/70175 , G03F7/70916 , H05G2/005
Abstract: A radiation source for a lithographic apparatus, in particular a laser-produced plasma source includes a fan unit surrounding but not obstructing the collected radiation beam that is operated to generate a flow in a buffer gas away from the optical axis. The fan unit can include a plurality of flat or curved blades generally parallel to the optical axis and driven to rotate about the optical axis.
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公开(公告)号：US20190033225A1
公开(公告)日：2019-01-31
申请号：US15883971
申请日：2018-01-30
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chun-Lin Louis CHANG , Shang-Chieh CHIEN , Shang-Ying WU , Li-Kai CHENG , Tzung-Chi FU , Bo-Tsun LIU , Li-Jui CHEN , Po-Chung CHENG , Anthony YEN , Chia-Chen CHEN
IPC: G01N21/88 , G03F7/20 , H01L21/027 , G01N21/94 , G01N21/956
CPC classification number: G01N21/8806 , G01N21/94 , G01N21/954 , G01N21/95623 , G03F7/2037 , G03F7/70033 , G03F7/70166 , G03F7/70175 , G03F7/70916 , H01L21/0275
Abstract: A single-shot metrology for direct inspection of an entirety of the interior of an EUV vessel is provided. An EUV vessel including an inspection tool integrated with the EUV vessel is provided. During an inspection process, the inspection tool is moved into a primary focus region of the EUV vessel. While the inspection tool is disposed at the primary focus region and while providing a substantially uniform and constant light level to an interior of the EUV vessel by way of an illuminator, a panoramic image of an interior of the EUV vessel is captured by way of a single-shot of the inspection tool. Thereafter, a level of tin contamination on a plurality of components of the EUV vessel is quantified based on the panoramic image of the interior of the EUV vessel. The quantified level of contamination is compared to a KPI, and an OCAP may be implemented.
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5.发明授权公开(公告)号：US09888554B2
公开(公告)日：2018-02-06
申请号：US15003385
申请日：2016-01-21
Applicant: ASML Netherlands B.V.
Inventor： Jonghoon Baek , Mathew Cheeran Abraham , David Robert Evans , Jack Michael Gazza
CPC classification number: H05G2/005 , G02B19/0095 , G02B27/0006 , G03F7/70033 , G03F7/70175 , G03F7/70925 , G03F7/70933 , H05G2/008
Abstract: A system and method of removing target material debris deposits simultaneously with generating EUV light includes generating hydrogen radicals in situ in the EUV vessel, proximate to the target material debris deposits and volatilizing the target material debris deposits and purging the volatilized target material debris deposits from the EUV vessel without the need of an oxygen containing species in the EUV vessel.
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Patent Agency Ranking
公开(公告)号：US20170252785A1
公开(公告)日：2017-09-07
申请号：US15062257
申请日：2016-03-07
Applicant: GLOBALFOUNDRIES Inc.
Inventor： Erik Robert HOSLER
CPC classification number: G03F7/70925 , G03F7/70033 , G03F7/70175
Abstract: Method and apparatus for in-situ EUV collector cleaning utilizing a cryogenic process and a magnetic trap are disclosed. Embodiments include providing a light source collector including a reflective surface; applying a cooling agent to a surface of the collector for accelerating transformations of characteristics of contaminants on the reflective surface; applying a purging agent to the reflective surface for dislodging the transformed contaminants; and removing the dislodged contaminants to a collection pod remote from the reflective surface.
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7.发明申请公开(公告)号：US20170215265A1
公开(公告)日：2017-07-27
申请号：US15003385
申请日：2016-01-21
Applicant: ASML Netherlands B.V.
Inventor： Jonghoon Baek , Mathew Cheeran Abraham , David Robert Evans , Jack Michael Gazza
CPC classification number: H05G2/005 , G02B19/0095 , G02B27/0006 , G03F7/70033 , G03F7/70175 , G03F7/70925 , G03F7/70933 , H05G2/008
Abstract: A system and method of removing target material debris deposits simultaneously with generating EUV light includes generating hydrogen radicals in situ in the EUV vessel, proximate to the target material debris deposits and volatilizing the target material debris deposits and purging the volatilized target material debris deposits from the EUV vessel without the need of an oxygen containing species in the EUV vessel.
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公开(公告)号：US09665007B2
公开(公告)日：2017-05-30
申请号：US15249989
申请日：2016-08-29
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Shang-Chieh Chien , Shu-Hao Chang , Jui-Ching Wu , Tsung-Yu Chen , Tzu-Hsiang Chen , Ming-Chin Chien , Chia-Chen Chen , Jeng-Horng Chen
CPC classification number: G03F7/7015 , G02B5/0891 , G02B7/1821 , G03F7/2008 , G03F7/2037 , G03F7/70033 , G03F7/70175 , G03F7/70916 , G03F7/70925 , G21K1/067
Abstract: An EUV collector is rotated between or during operations of an EUV photolithography system. Rotating the EUV collector causes contamination to distribute more evenly over the collector's surface. This reduces the rate at which the EUV photolithography system loses image fidelity with increasing contamination and thereby increases the collector lifetime. Rotating the collector during operation of the EUV photolithography system can induce convection and reduce the contamination rate. By rotating the collector at sufficient speed, some contaminating debris can be removed through the action of centrifugal force.
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公开(公告)号：US09411250B2
公开(公告)日：2016-08-09
申请号：US13062872
申请日：2009-04-30
Applicant: Vadim Yevgenyevich Banine , Erik Roelof Loopstra , Vladimir Vitalevich Ivanov , Vladimir Mihailovitch Krivtsun
Inventor： Vadim Yevgenyevich Banine , Erik Roelof Loopstra , Vladimir Vitalevich Ivanov , Vladimir Mihailovitch Krivtsun
CPC classification number: G03F7/70916 , G03F7/70175 , G03F7/70858 , G03F7/70983 , H05G2/003 , H05G2/005
Abstract: A radiation system is configured to generate a radiation beam. The radiation system includes a radiation source configured to generate a plasma that emits radiation and debris, and a radiation collector configured to direct collected radiation to a radiation beam emission aperture. A magnetic field generator is configured to generate a magnetic field with a gradient in magnetic field strength to direct the plasma away from the radiation collector.
Abstract translation: 辐射系统被配置为产生辐射束。 辐射系统包括被配置为产生发射辐射和碎屑的等离子体的辐射源，以及被配置为将收集的辐射引导到辐射束发射孔径的辐射收集器。 磁场发生器被配置为产生具有磁场强度梯度的磁场，以将等离子体引导离开辐射收集器。
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公开(公告)号：US09363879B2
公开(公告)日：2016-06-07
申请号：US14532897
申请日：2014-11-04
Applicant: ASML NETHERLANDS B.V.
Inventor： Tjarko Adriaan Rudolf Van Empel , Vadim Yevgenyevich Banine , Vladimir Vitalevich Ivanov , Erik Roelof Loopstra , Johannes Hubertus Josephina Moors , Jan Bernard Plechelmus Van Schoot , Yuri Johannes Gabriël Van de Vijver , Gerardus Hubertus Petrus Maria Swinkels , Hendrikus Gijsbertus Schimmel , Dzmitry Labetski
CPC classification number: H05G2/008 , G03F7/70175 , G03F7/70891 , G03F7/70916 , G03F7/70983 , H05G2/003 , H05G2/006 , H05K7/2039
Abstract: A module for producing extreme ultraviolet radiation, including an extreme ultraviolet radiation-emitting source, the source being provided with a supply configured to supply a fluid of an ignition material to a predetermined target ignition position and a target-igniting mechanism constructed and arranged to produce a plasma from the ignition material at the target ignition position, the plasma emitting the extreme ultraviolet radiation; a collector mirror constructed and arranged to focus radiation emitted by the plasma at a focal point; and a heat sink having a thermal energy-diverting surface constructed and arranged to divert thermal energy away from the target ignition position, wherein the heat sink is located at a position proximate the target ignition position.
Abstract translation: 一种用于产生极紫外辐射源的模块，包括极紫外辐射发射源，该源提供有被配置为将点火材料的流体供应到预定的目标点火位置的供应，以及构造和布置以产生的点火机构 来自点火材料的等离子体在目标点火位置，等离子体发射极紫外线辐射; 收集器镜，构造和布置成将等离子体发射的辐射聚焦在焦点处; 以及散热器，其具有构造和布置成将热能转移离开目标点火位置的热能转向表面，其中散热器位于靠近目标点火位置的位置。
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