摘要:
A constant-current source that contains two substantial identical field effect transistors as well as a simple resistance network. The actual saturation current of one of the field effect transistors is measured and converted by the resistance network into a control voltage for the other field effect transistor which produces the desired constant current. With such a circuit, production tolerances, especially tolerances for field effect transistor, as well as operation-dependent temperature variations can be compensated for within a wide range.
摘要:
A driver circuit for the generation of a switching voltage, particularly a negative switching voltage, which is suitable for GaAs technology. Field effect transistors whose electric properties can vary within a wide range and ohmic resistances that do not have to be adjusted later are used. The driver circuit is particularly suited for the selection of HF components.
摘要:
The invention relates to an integrated HF circuit with attenuators, exhibiting an input, an output, and a number of field effect transistors as switching elements with a number of positive supply voltages, wherein the attenuators control, according to an attenuation state, which can be switched between two states, the amplitude of a reference signal, applied to the input, and produces an actual signal at the output. According to the invention, the attenuators exhibit a number of inductors and/or capacitors for phase compensation, and the field effect transistors may be driven without power.
摘要:
A limiting circuit has a signal input and a signal output for limiting an output signal that is present at the signal output and that can be fed to a further circuit connected to the output of the limiting circuit. A voltage connection for feeding a bias voltage and a transistor are present, wherein the gate connection of the transistor is connected to the voltage connection by means of a first matching circuit and to the signal input by means of a second matching circuit.
摘要:
A limiting circuit has a signal input and a signal output for limiting an output signal that is present at the signal output and that can be fed to a further circuit connected to the output of the limiting circuit. A voltage connection for feeding a bias voltage and a transistor are present, wherein the gate connection of the transistor is connected to the voltage connection by means of a first matching circuit and to the signal input by means of a second matching circuit.
摘要:
In a method and apparatus for compensating for gain changes in an amplifier circuit comprising radio-frequency modules and attenuation elements, a radio-frequency module is driven with a first temperature-dependent monitoring voltage UHF(T), and an attenuation element with a second temperature-dependent monitoring voltage UVG(T). The first temperature-dependent monitoring voltage UHF(T) is produced by applying a temperature dependency to an individual monitoring voltage Uopt, which is predetermined for a predetermined temperature for a radio-frequency module, in order to set the optimum operating point of the radio-frequency module. The second temperature-dependent monitoring voltage UVG(T) is produced by applying a temperature dependency to a predetermined monitoring voltage UVG—T for the attenuation element. The monitoring voltage UVG—T is determined in an iteration method, such that the output power of the amplifier circuit reaches a predeterminable level at a constant input power. Memory devices are provided for storing values for producing monitoring voltages for the radio-frequency modules and attenuation elements.
摘要:
In a method and apparatus for compensating for gain changes in an amplifier circuit comprising radio-frequency modules and attenuation elements, a radio-frequency module is driven with a first temperature-dependent monitoring voltage UHF(T), and an attenuation element with a second temperature-dependent monitoring voltage UVG(T). The first temperature-dependent monitoring voltage UHF(T) is produced by applying a temperature dependency to an individual monitoring voltage Uopt, which is predetermined for a predetermined temperature for a radio-frequency module, in order to set the optimum operating point of the radio-frequency module. The second temperature-dependent monitoring voltage UVG(T) is produced by applying a temperature dependency to a predetermined monitoring voltage UVG—T for the attenuation element. The monitoring voltage UVG—T is determined in an iteration method, such that the output power of the amplifier circuit reaches a predeterminable level at a constant input power. Memory devices are provided for storing values for producing monitoring voltages for the radio-frequency modules and attenuation elements.