公开(公告)号：US07088852B1

公开(公告)日：2006-08-08

申请号：US09833247

申请日：2001-04-11

申请人： Michael R. Bruce ,  Victoria J Bruce ,  Glen Gilfeather

发明人： Michael R. Bruce ,  Victoria J Bruce ,  Glen Gilfeather

IPC分类号： G06K9/00

CPC分类号： G01N23/2251

摘要： Defect analysis of a semiconductor die is enhanced in a manner that makes possible the viewing of spatial manifestations of the defect from virtually any angle. According to an example embodiment of the present invention, substrate is removed from a semiconductor die while simultaneously obtaining images of the portions of the die from which substrate is being removed. The images are taken at various points in the substrate removal process, recorded and combined together to form a three-dimensional image of selected portions of the die. The image is then used to view the selected portions, and the nature of one or more defects therein are analyzed.

摘要翻译： 增强半导体裸片的缺陷分析，使得可以从几乎任何角度观察缺陷的空间表现。 根据本发明的示例性实施例，从半导体管芯移除衬底，同时获得正在去除衬底的管芯的部分的图像。 在基板去除过程中的各个点拍摄图像，记录并组合在一起，以形成模具的所选部分的三维图像。 然后使用该图像来查看所选择的部分，并且分析其中的一个或多个缺陷的性质。