公开(公告)号：US5925915A

公开(公告)日：1999-07-20

申请号：US251011

申请日：1994-05-31

申请人： Michael S. Liu ,  James C. Lai

发明人： Michael S. Liu ,  James C. Lai

IPC分类号： H01L27/12 ,  H01L27/01 ,  H01L29/76

CPC分类号： H01L27/1203

摘要： A pair of complementary MOSFET's having regions of a common conductivity type separating the source and drain regions thereof which are provided on a support structure formed of an electrical insulating layer on a semiconductor material base. MOSFET's has a gate oxide layer on which is provided a gate semiconductor structure, with these structures each being of a common conductivity type and located across the gate oxide layers from the corresponding common conductivity type region.

摘要翻译： 一对互补MOSFET，其具有分开其源极和漏极区域的共同导电类型的区域，其设置在由半导体材料基底上的电绝缘层形成的支撑结构上。 MOSFET具有栅极氧化层，在栅极氧化物层上设置栅极半导体结构，这些结构各自具有公共导电类型，并且从相应的公共导电类型区域跨越栅极氧化物层。