公开(公告)号：US20050274694A1

公开(公告)日：2005-12-15

申请号：US11148403

申请日：2005-06-09

申请人： Michimasa Funabashi ,  Shigeru Omata ,  Nobuaki Toma ,  Masatoshi Fukushima

发明人： Michimasa Funabashi ,  Shigeru Omata ,  Nobuaki Toma ,  Masatoshi Fukushima

IPC分类号： B44C1/22 ,  C23C16/44 ,  C23G1/00 ,  G03F7/42 ,  H01L21/302

CPC分类号： C23C16/4402 ,  G03F7/427 ,  H01J2237/3342 ,  H01L21/31138

摘要： A semiconductor manufacturing apparatus capable of removing metal derived from an electrode from ozone generated by the silent discharge is provided. The ozone generated by the silent discharge between electrodes in the ozone generating unit is permeated through a molecule permeable film based on pressure difference between the back and the front of the molecule permeable film constituting a filter. The permeated ozone is supplied together with separately-generated water vapor to a resist surface on a semiconductor wafer to remove the resist. In the resist removal described above, the high-concentration metal contamination due to the metal derived from an electrode can be prevented.

摘要翻译： 本发明提供一种能够从由静电放电产生的臭氧中去除电极的金属的半导体制造装置。 基于构成过滤器的分子渗透膜的背面和前面之间的压力差，通过臭氧发生单元中的电极之间的无声放电产生的臭氧渗透通过分子渗透膜。 渗透的臭氧与单独产生的水蒸气一起供应到半导体晶片上的抗蚀剂表面以除去抗蚀剂。 在上述抗蚀剂去除中，可以防止由于电极衍生的金属引起的高浓度金属污染。