公开(公告)号：US20110136329A1

公开(公告)日：2011-06-09

申请号：US12962035

申请日：2010-12-07

申请人： Michiro SUGITANI ,  Genshu Fuse

发明人： Michiro SUGITANI ,  Genshu Fuse

IPC分类号： H01L21/265

CPC分类号： H01L21/26586 ,  H01L21/26513 ,  H01L21/26526 ,  H01L29/66803

摘要： A manufacturing method of a semiconductor device includes preparing a semiconductor substrate which is a base substrate of the semiconductor device and which is formed with a concavity and convexity part on the surface of the semiconductor substrate. The method further comprises depositing on the surface of the semiconductor substrate an impurity thin film including an impurity atom which becomes a donor or an acceptor in the semiconductor substrate and performing an ion implantation from a diagonal upper direction to the impurity thin film deposited on the concavity and convexity part of the semiconductor substrate. The method still further comprises recoiling the impurity atom from the inside of the impurity thin film to the inside of the concavity and convexity part by performing the ion implantation.

摘要翻译： 半导体器件的制造方法包括制备作为半导体器件的基底的半导体衬底，并且在半导体衬底的表面上形成有凹凸部。 该方法还包括在半导体衬底的表面上沉积杂质薄膜，该杂质薄膜包含在半导体衬底中成为供体或受体的杂质原子，并从对角上方执行离子注入沉积在凹面上的杂质薄膜 和半导体衬底的凸部。 该方法还包括通过进行离子注入将杂质原子从杂质薄膜的内部重新吸收到凹凸部的内部。