公开(公告)号：US20030025128A1

公开(公告)日：2003-02-06

申请号：US10200892

申请日：2002-07-22

Applicant: MicroLink Devices, Inc.

Inventor： Noren Pan ,  Byung-Kwon Han

IPC: H01L031/0328

CPC classification number: H01L29/66318 ,  H01L29/0817 ,  H01L29/1004 ,  H01L29/452 ,  H01L29/7371

Abstract: A heterojunction bipolar transistor is provided having an improved current gain cutoff frequency. The heterojunction bipolar transistor includes a contact region formed from InGaAsSb. The contact region allows an emitter region of the heterojunction bipolar transistor to realize a lower contact resistance value to yield an improved cutoff frequency (fT).

公开(公告)号：US20030032252A1

公开(公告)日：2003-02-13

申请号：US10201760

申请日：2002-07-22

Applicant: MicroLink Devices, Inc.

Inventor： Noren Pan ,  Byung-Kwon Han

IPC: H01L021/331 ,  H01L021/8222 ,  H01L021/8228 ,  H01L031/072 ,  H01L031/0328

CPC classification number: H01L29/66318 ,  H01L29/0817 ,  H01L29/1004 ,  H01L29/452 ,  H01L29/7371

Abstract: A heterojunction bipolar transistor is provided that has a reduced turn-on voltage threshold. A base spacer layer is provided and alternately an emitter layer is provided that has a lowered energy gap. The lowered energy gap of the base spacer or the emitter spacer allow the heterojunction bipolar transistor to realize a lower turn-on voltage threshold. The thickness of the emitter layer if utilized is kept to a minimum to reduce the associated space charge recombination current in the heterojunction bipolar transistor.

Abstract translation: 提供了具有降低的导通电压阈值的异质结双极晶体管。 提供基底间隔层，并且交替地提供具有降低的能隙的发射极层。 基极间隔物或发射极间隔物的能量下降使得异质结双极晶体管实现较低的导通电压阈值。 如果使用发射极层的厚度保持最小以减少异质结双极晶体管中相关的空间电荷复合电流。

公开(公告)号：US20030025179A1

公开(公告)日：2003-02-06

申请号：US10200900

申请日：2002-07-22

Applicant: MicroLink Devices, Inc.

Inventor： Noren Pan ,  Byung-Kwon Han

IPC: H01L027/102

CPC classification number: H01L29/66318 ,  H01L29/1004 ,  H01L29/7371

Abstract: A heterojunction bipolar transistor is provided having an improved current gain cutoff frequency. The heterojunction bipolar transistor includes a graded base layer formed from antimony. The graded base allows the heterojunction bipolar transistor to establish a quasi-electric field to yield an improved cutoff frequency.

Abstract translation: 提供具有改善的电流增益截止频率的异质结双极晶体管。 异质结双极晶体管包括由锑形成的分级基底层。 分级基极允许异质结双极晶体管建立准电场以产生改善的截止频率。