公开(公告)号：US11158703B2

公开(公告)日：2021-10-26

申请号：US16446557

申请日：2019-06-19

Applicant: Microchip Technology Inc.

Inventor： Amaury Gendron-Hansen ,  Dumitru Sdrulla

IPC: H01L29/66 ,  H01L29/06 ,  H01L29/40 ,  H01L21/761 ,  H01L29/16 ,  H01L29/78

Abstract: A high-voltage termination for a semiconductor device includes a substrate of a first conductivity type, an implanted device region of a second conductivity type of the semiconductor device, a shallow trench disposed in the substrate adjacent to the implanted device region, a doped extension region of the second conductivity type extending between the implanted device region and a first edge of the shallow trench adjacent to the implanted device region, a junction termination extension region of the second conductivity type formed in the shallow trench contacting the extension region and extending past a second edge of the shallow trench opposite the implanted device region, an insulating layer formed over at least a portion of the extension region and over the junction termination extension region, and a metal layer formed over the insulating layer extending into at least a portion of the shallow trench and electrically connected to the extension region.