公开(公告)号：US20220093397A1

公开(公告)日：2022-03-24

申请号：US17542303

申请日：2021-12-03

Applicant: Microchip Technology Inc.

Inventor： Amaury Gendron-Hansen ,  Bruce Odekirk

IPC: H01L21/02 ,  H01L21/04 ,  H01L27/092 ,  H01L21/67

Abstract: A silicon carbide semiconductor device includes a silicon carbide (SiC) substrate having a SiC epitaxial layer disposed over a surface of the SiC substrate, the SiC substrate having a first conductivity and the SiC epitaxial layer having the first conductivity. A contact region and a well region are formed in the SiC epitaxial layer, the contact region and the well region have a doping level of a second conductivity opposite the first conductivity. The contact region lies completely within the well region, is not in contact with a region having the first conductivity and has edges recessed from edges of the well region.

公开(公告)号：US11158703B2

公开(公告)日：2021-10-26

申请号：US16446557

申请日：2019-06-19

Applicant: Microchip Technology Inc.

Inventor： Amaury Gendron-Hansen ,  Dumitru Sdrulla

IPC: H01L29/66 ,  H01L29/06 ,  H01L29/40 ,  H01L21/761 ,  H01L29/16 ,  H01L29/78

Abstract: A high-voltage termination for a semiconductor device includes a substrate of a first conductivity type, an implanted device region of a second conductivity type of the semiconductor device, a shallow trench disposed in the substrate adjacent to the implanted device region, a doped extension region of the second conductivity type extending between the implanted device region and a first edge of the shallow trench adjacent to the implanted device region, a junction termination extension region of the second conductivity type formed in the shallow trench contacting the extension region and extending past a second edge of the shallow trench opposite the implanted device region, an insulating layer formed over at least a portion of the extension region and over the junction termination extension region, and a metal layer formed over the insulating layer extending into at least a portion of the shallow trench and electrically connected to the extension region.

公开(公告)号：US11615953B2

公开(公告)日：2023-03-28

申请号：US17542303

申请日：2021-12-03

Applicant: Microchip Technology Inc.

Inventor： Amaury Gendron-Hansen ,  Bruce Odekirk

IPC: H01L21/02 ,  H01L21/04 ,  H01L27/092 ,  H01L21/67

Abstract: A silicon carbide semiconductor device includes a silicon carbide (SiC) substrate having a SiC epitaxial layer disposed over a surface of the SiC substrate, the SiC substrate having a first conductivity and the SiC epitaxial layer having the first conductivity. A contact region and a well region are formed in the SiC epitaxial layer, the contact region and the well region have a doping level of a second conductivity opposite the first conductivity. The contact region lies completely within the well region, is not in contact with a region having the first conductivity and has edges recessed from edges of the well region.

公开(公告)号：US11222782B2

公开(公告)日：2022-01-11

申请号：US16785491

申请日：2020-02-07

Applicant: Microchip Technology Inc.

Inventor： Amaury Gendron-Hansen ,  Bruce Odekirk

IPC: H01L21/02 ,  H01L21/04 ,  H01L27/092 ,  H01L21/67

Abstract: A method for fabricating a silicon carbide semiconductor device includes providing a SiC epitaxial layer disposed over a surface of a SiC substrate, forming an implant aperture in a hardmask layer on a surface of the expitaxial SiC layer, implanting contact and well regions in the SiC epitaxial layer through the hardmask layer, the contact region lying completely within and recessed from edges of the well region by performing one of implanting the well region through the implant aperture, reducing the area of the implant aperture forming a reduced-area contact implant aperture and implanting the contact region through the reduced-area implant aperture to form a contact region, and implanting the contact region through the implant aperture, increasing the area of the implant aperture to form a increased-area well implant aperture and implanting the well region through the increased-area implant aperture to form a well region completely surrounding the contact region.

公开(公告)号：US20210225645A1

公开(公告)日：2021-07-22

申请号：US16785491

申请日：2020-02-07

Applicant: Microchip Technology Inc.

Inventor： Amaury Gendron-Hansen ,  Bruce Odekirk

IPC: H01L21/02 ,  H01L21/04 ,  H01L21/67 ,  H01L27/092

Abstract: A method for fabricating a silicon carbide semiconductor device includes providing a SiC epitaxial layer disposed over a surface of a SiC substrate, forming an implant aperture in a hardmask layer on a surface of the expitaxial SiC layer, implanting contact and well regions in the SiC epitaxial layer through the hardmask layer, the contact region lying completely within and recessed from edges of the well region by performing one of implanting the well region through the implant aperture, reducing the area of the implant aperture forming a reduced-area contact implant aperture and implanting the contact region through the reduced-area implant aperture to form a contact region, and implanting the contact region through the implant aperture, increasing the area of the implant aperture to form a increased-area well implant aperture and implanting the well region through the increased-area implant aperture to form a well region completely surrounding the contact region.