公开(公告)号：US20230050344A1

公开(公告)日：2023-02-16

申请号：US17888057

申请日：2022-08-15

Applicant: Microchip Technology Incorporated

Inventor： Daniel Baker ,  Justin Sato ,  Chris Sundahl

IPC: H01L21/311 ,  H01L21/768 ,  H01L21/027 ,  H01L23/522

Abstract: A method of forming a via is provided. A lower metal element is formed, and a first patterned photoresist is used to form a sacrificial element over the lower metal element. A dielectric region including a dielectric element projection extending upwardly above the sacrificial element is formed. A second patterned photoresist including a second photoresist opening is formed, wherein the dielectric element projection is at least partially located in the second photoresist opening. A dielectric region trench opening is etched in the dielectric region. The sacrificial element is removed to define a via opening extending downwardly from the dielectric region trench opening. The dielectric region trench opening and the via opening are filled to define (a) an upper metal element in the dielectric region trench opening and (b) a via in the via opening, wherein the via extends downwardly from the upper metal element.