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公开(公告)号：US20250107194A1
公开(公告)日：2025-03-27
申请号：US18891853
申请日：2024-09-20
Applicant: Microchip Technology Incorporated
Inventor： Shesh Mani Pandey , Bruce Odekirk , Sami El Hageali
Abstract: A method of manufacturing a semiconductor device is provided. The method may include implanting a silicon-rich layer on a surface of a silicon carbide substrate, and growing a gate oxide layer on the silicon-rich layer on the surface of the silicon carbide substrate.
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