公开(公告)号：US20210399012A1

公开(公告)日：2021-12-23

申请号：US17373278

申请日：2021-07-12

Applicant: Micron Technology, Inc

Inventor： Xiaosong Zhang ,  Yi Hu ,  Tom J. John ,  Wei Yeeng Ng ,  Chandra Twari

IPC: H01L27/11582 ,  H01L27/11556 ,  H01L27/11565 ,  H01L21/311 ,  H01L27/11519

Abstract: In some embodiments, a memory array comprising strings of memory cells comprise laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers. Operative channel-material strings of memory cells extend through the insulative tiers and the conductive tiers. Insulative pillars are laterally-between and longitudinally-along immediately-laterally-adjacent of the memory blocks. The pillars comprise vertically-spaced and radially-projecting insulative rings in the conductive tiers as compared to the insulative tiers. Other embodiments, including methods, are disclosed.