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公开(公告)号:US20210399012A1
公开(公告)日:2021-12-23
申请号:US17373278
申请日:2021-07-12
Applicant: Micron Technology, Inc
Inventor: Xiaosong Zhang , Yi Hu , Tom J. John , Wei Yeeng Ng , Chandra Twari
IPC: H01L27/11582 , H01L27/11556 , H01L27/11565 , H01L21/311 , H01L27/11519
Abstract: In some embodiments, a memory array comprising strings of memory cells comprise laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers. Operative channel-material strings of memory cells extend through the insulative tiers and the conductive tiers. Insulative pillars are laterally-between and longitudinally-along immediately-laterally-adjacent of the memory blocks. The pillars comprise vertically-spaced and radially-projecting insulative rings in the conductive tiers as compared to the insulative tiers. Other embodiments, including methods, are disclosed.