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公开(公告)号：US20250081535A1
公开(公告)日：2025-03-06
申请号：US18784338
申请日：2024-07-25
Applicant: Micron Technology, Inc.
Inventor： Adharsh Rajagopal , Scott E. Sills , Yi Fang Lee , Glen H. Walters , Alexandre Marc Subirats , Yuanzhi Ma
IPC: H01L29/786 , H01L29/423 , H01L29/49 , H01L29/66
Abstract: Systems, methods and apparatus are provided for transistors having a channel region comprising a crystalline spinel indium-gallium-zinc-oxide (IGZO) material.
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