公开(公告)号：US10949284B2

公开(公告)日：2021-03-16

申请号：US16204089

申请日：2018-11-29

Applicant: Micron Technology, Inc.

Inventor： Sujeet V. Ayyapureddi ,  Andrew F. Laforge

IPC: G06F11/00 ,  G06F11/07 ,  G11C11/4072 ,  G11C11/4074 ,  G11C17/16 ,  H01L27/112 ,  G11C11/4076

Abstract: Devices and methods for using nonvolatile memory and volatile memory are described. As volatile memory cells may not retain information absent power, nonvolatile memory cells (e.g., antifuses, phase-change memory cells, ferroelectric memory cells) may store various information related to operating conditions of the volatile memory cells. For example, an operating condition (e.g., voltage, temperature, a timing parameter for command, or refresh rate) of volatile memory cells may exceed an operating limit causing the volatile memory cells to fail. An indication of the operating condition of the volatile memory cells may be stored in nonvolatile memory cells to be retrieved later. The indication stored in the nonvolatile memory cells may facilitate analytical processes to identify root-causes that may have caused the volatile memory cells to fail. Nonvolatile memory cells may be configured to indicate whether such an operating condition exists and provide specific information about the operating condition.

公开(公告)号：US20220230901A1

公开(公告)日：2022-07-21

申请号：US17248344

申请日：2021-01-21

Applicant: Micron Technology, Inc.

Inventor： Mohamed A. Ditali ,  Andrew F. Laforge ,  Michael D. Leavitt ,  Anthony D. Veches

IPC: H01L21/673 ,  B65D81/30 ,  B65D85/30

Abstract: Containers for supporting one or more semiconductor devices therein may include walls positioned to at least partially surround a semiconductor device. At least one of the walls may include a radiation-shielding material. A support structure may be shaped, positioned, and configured to support the semiconductor device within the walls.

公开(公告)号：US20200174866A1

公开(公告)日：2020-06-04

申请号：US16204089

申请日：2018-11-29

Applicant: Micron Technology, Inc.

Inventor： Sujeet V. Ayyapureddi ,  Andrew F. Laforge

IPC: G06F11/07 ,  G11C11/4072 ,  G11C11/4076 ,  G11C11/4074 ,  G11C17/16 ,  H01L27/112

Abstract: Devices and methods for using nonvolatile memory and volatile memory are described. As volatile memory cells may not retain information absent power, nonvolatile memory cells (e.g., antifuses, phase-change memory cells, ferroelectric memory cells) may store various information related to operating conditions of the volatile memory cells. For example, an operating condition (e.g., voltage, temperature, a timing parameter for command, or refresh rate) of volatile memory cells may exceed an operating limit causing the volatile memory cells to fail. An indication of the operating condition of the volatile memory cells may be stored in nonvolatile memory cells to be retrieved later. The indication stored in the nonvolatile memory cells may facilitate analytical processes to identify root-causes that may have caused the volatile memory cells to fail. Nonvolatile memory cells may be configured to indicate whether such an operating condition exists and provide specific information about the operating condition.