公开(公告)号：US20200312954A1

公开(公告)日：2020-10-01

申请号：US16369797

申请日：2019-03-29

Applicant: Micron Technology, Inc.

Inventor： Jerome A. Imonigie ,  Adriel Jebin Jacob Jebaraj ,  Brian J. Kerley ,  Sanjeev Sapra ,  Ashwin Panday

IPC: H01L49/02 ,  H01L21/311 ,  H01L21/3213 ,  H01L27/108

Abstract: Methods, apparatuses, and systems related to forming a recess in a semiconductor structure are described. An example method includes etching the semiconductor structure using an elevated temperature dilution of acid and water. The method further includes etching the semiconductor structure using a room temperature wet etch of acid and water and a surface modification chemistry.

公开(公告)号：US10978306B2

公开(公告)日：2021-04-13

申请号：US16369797

申请日：2019-03-29

Applicant: Micron Technology, Inc.

Inventor： Jerome A. Imonigie ,  Adriel Jebin Jacob Jebaraj ,  Brian J. Kerley ,  Sanjeev Sapra ,  Ashwin Panday

IPC: H01L21/306 ,  H01L49/02 ,  H01L21/311 ,  H01L27/108 ,  H01L21/3213 ,  H01L21/8234 ,  H01L21/8238 ,  H01L21/02 ,  H01L21/302

Abstract: Methods, apparatuses, and systems related to forming a recess in a semiconductor structure are described. An example method includes etching the semiconductor structure using an elevated temperature dilution of acid and water. The method further includes etching the semiconductor structure using a room temperature wet etch of acid and water and a surface modification chemistry.