公开(公告)号：US20230402407A1

公开(公告)日：2023-12-14

申请号：US17752647

申请日：2022-05-24

Applicant: Micron Technology, Inc.

Inventor： Hao Chen ,  Raja Kumar Varma Manthena ,  Surendranath C. Eruvuru

IPC: H01L23/60 ,  H01L23/58

CPC classification number: H01L23/60 ,  H01L23/585

Abstract: A memory device can include a semiconductor substrate having a plurality of active semiconductor devices. The memory device can include a plurality of metallization layers disposed over the semiconductor substrate, where each of the plurality of metallization layers is separated from adjacent metallization layers by an interlayer dielectric. The memory device also includes a dummy metal fill disposed in a metallization layer. The dummy metal fill can be connected to a discharge path for dissipating a charge build up in the dummy metal fill to minimize antenna effects. In some embodiments, the discharge path can include the semiconductor substrate, which can be an electrical drain. The antenna protected dummy metal fill ensures is configured such that any accumulated charge during the fabrication process is discharged to the electric drain.