公开(公告)号：US20250166706A1

公开(公告)日：2025-05-22

申请号：US18945159

申请日：2024-11-12

Applicant: Micron Technology, Inc.

Inventor： Yee Yang Tay ,  Pey Chyi Tang ,  Jiejuan Liu ,  Yuan Jun Teng ,  Hwei Ean Lim

IPC: G11C16/08 ,  G06F12/02 ,  G11C16/04 ,  G11C16/10

Abstract: Methods, systems, and apparatuses include sampling a memory subportion of a portion of memory, where the memory subportion includes multiple wordlines. A sampled voltage value for the memory subportion is determined based on the sampling. A maximum start voltage delta is received for the memory subportion, where the maximum start voltage delta is an estimated difference between the sampled voltage value and a lowest voltage value for the memory subportion. A start voltage to apply during programming of the memory subportion is determined using the sampled voltage value and the maximum start voltage delta.