公开(公告)号：US11329133B2

公开(公告)日：2022-05-10

申请号：US16688854

申请日：2019-11-19

Applicant: Micron Technology, Inc.

Inventor： Yi Fang Lee ,  Isamu Asano ,  Ramanathan Gandhi ,  Scott E. Sills

IPC: H01L27/108 ,  H01L29/22 ,  H01L29/786 ,  G11C11/402

Abstract: Some embodiments include an integrated assembly having a gate material, an insulative material adjacent the gate material, and a semiconductor oxide adjacent the insulative material. The semiconductor oxide has a channel region proximate the gate material and spaced from the gate material by the insulative material. An electric field along the gate material induces carrier flow within the channel region, with the carrier flow being along a first direction. The semiconductor oxide includes a grain boundary having a portion which extends along a second direction that crosses the first direction of the carrier flow. In some embodiments, the semiconductor oxide has a grain boundary which extends along the first direction and which is offset from the insulative material by an intervening portion of the semiconductor oxide. The carrier flow is within the intervening region and substantially parallel to the grain boundary. Some embodiments include methods of forming integrated assemblies.

公开(公告)号：US20220238658A1

公开(公告)日：2022-07-28

申请号：US17720032

申请日：2022-04-13

Applicant: Micron Technology, Inc.

Inventor： Yi Fang Lee ,  Isamu Asano ,  Ramanathan Gandhi ,  Scott E. Sills

IPC: H01L29/22 ,  H01L29/786 ,  G11C11/402 ,  H01L27/108

Abstract: Some embodiments include an integrated assembly having a gate material, an insulative material adjacent the gate material, and a semiconductor oxide adjacent the insulative material. The semiconductor oxide has a channel region proximate the gate material and spaced from the gate material by the insulative material. An electric field along the gate material induces carrier flow within the channel region, with the carrier flow being along a first direction. The semiconductor oxide includes a grain boundary having a portion which extends along a second direction that crosses the first direction of the carrier flow. In some embodiments, the semiconductor oxide has a grain boundary which extends along the first direction and which is offset from the insulative material by an intervening portion of the semiconductor oxide. The carrier flow is within the intervening region and substantially parallel to the grain boundary. Some embodiments include methods of forming integrated assemblies.

公开(公告)号：US20200161434A1

公开(公告)日：2020-05-21

申请号：US16688854

申请日：2019-11-19

Applicant: Micron Technology, Inc.

Inventor： Yi Fang Lee ,  Isamu Asano ,  Ramanathan Gandhi ,  Scott E. Sills

IPC: H01L29/22 ,  H01L27/108 ,  G11C11/402 ,  H01L29/786

Abstract: Some embodiments include an integrated assembly having a gate material, an insulative material adjacent the gate material, and a semiconductor oxide adjacent the insulative material. The semiconductor oxide has a channel region proximate the gate material and spaced from the gate material by the insulative material. An electric field along the gate material induces carrier flow within the channel region, with the carrier flow being along a first direction. The semiconductor oxide includes a grain boundary having a portion which extends along a second direction that crosses the first direction of the carrier flow. In some embodiments, the semiconductor oxide has a grain boundary which extends along the first direction and which is offset from the insulative material by an intervening portion of the semiconductor oxide. The carrier flow is within the intervening region and substantially parallel to the grain boundary. Some embodiments include methods of forming integrated assemblies.