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公开(公告)号：US20190333796A1
公开(公告)日：2019-10-31
申请号：US15962648
申请日：2018-04-25
Applicant: Micron Technology, Inc.
Inventor： James D. Huffaker , Kim M. Hartnett , Ajay Raghunathan , Libo Wang , Linmiao Zhang , Di Wu
Abstract: Several embodiments of the present technology are directed to semiconductor devices, and systems and associated methods for treating semiconductor devices based on warpage data. In some embodiments, a method can include heating a plurality of semiconductor devices from a first temperature to a second temperature, and determining warpage data at a plurality of points on the surfaces of the semiconductor devices as they are being heated. The method can further comprise applying a multivariate analysis to the surface warpage data to generate a multivariate statistic for each of the semiconductor devices at various sample temperatures. The multivariate statistics can be used to determine whether the semiconductor devices exceed or fall below a threshold limit.
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公开(公告)号：US11127612B2
公开(公告)日：2021-09-21
申请号：US15962648
申请日：2018-04-25
Applicant: Micron Technology, Inc.
Inventor： James D. Huffaker , Kim M. Hartnett , Ajay Raghunathan , Libo Wang , Linmiao Zhang , Di Wu
Abstract: Several embodiments of the present technology are directed to semiconductor devices, and systems and associated methods for treating semiconductor devices based on warpage data. In some embodiments, a method can include heating a plurality of semiconductor devices from a first temperature to a second temperature, and determining warpage data at a plurality of points on the surfaces of the semiconductor devices as they are being heated. The method can further comprise applying a multivariate analysis to the surface warpage data to generate a multivariate statistic for each of the semiconductor devices at various sample temperatures. The multivariate statistics can be used to determine whether the semiconductor devices exceed or fall below a threshold limit.
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