公开(公告)号：US20200342931A1

公开(公告)日：2020-10-29

申请号：US16926476

申请日：2020-07-10

Applicant: Micron Technology, Inc.

Inventor： James R. Rehmeyer ,  George B. Raad ,  Debra M. Bell ,  Markus H. Geiger ,  Anthony D. Veches

IPC: G11C11/4094 ,  G11C11/408 ,  G11C11/4096 ,  G11C11/406

Abstract: Methods, systems, and devices for phase charge sharing are described. In some memory systems or memory devices, one or more decoders may be used to bias access lines of a memory die. The decoders may transfer voltage or current between a first conductive line of the decoder and a second conductive line of the decoder via a shorting device. Transferring the voltage or current may be performed as part of or in association with an operation (e.g., an activate or pre-charge operation) to access one or more memory cells of the memory die. In some examples, the decoders may transfer voltage or current between a first conductive line of a decoder associated with a first refresh activity and a second conductive line of the decoder associated with a second refresh activity via a shorting device.