公开(公告)号：US09305865B2

公开(公告)日：2016-04-05

申请号：US14068837

申请日：2013-10-31

Applicant: Micron Technology, Inc.

Inventor： Anurag Jindal ,  Jian He ,  Lalapet Rangan Vasudevan ,  Kyle K. Kirby ,  Hongqi Li

IPC: H01L21/00 ,  H01L21/76 ,  H01L23/48 ,  H01L21/768 ,  H01L23/522

CPC classification number: H01L23/481 ,  H01L21/76801 ,  H01L21/76838 ,  H01L21/76898 ,  H01L23/522 ,  H01L23/528 ,  H01L23/53228 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods of manufacturing semiconductor devices and semiconductor devices with through-substrate vias (TSVs). One embodiment of a method of manufacturing a semiconductor device includes forming an opening through a dielectric structure and at least a portion of a semiconductor substrate, and forming a dielectric liner material having a first portion lining the opening and a second portion on an outer surface of the dielectric structure laterally outside of the opening. The method further includes removing the conductive material such that the second portion of the dielectric liner material is exposed, and forming a damascene conductive line in the second portion of the dielectric liner material that is electrically coupled to the TSV.

Abstract translation: 制造具有贯通衬底通孔（TSV）的半导体器件和半导体器件的方法。 制造半导体器件的方法的一个实施例包括通过电介质结构和半导体衬底的至少一部分形成开口，以及形成具有衬在开口上的第一部分的电介质衬垫材料和在外表面上的第二部分 电介质结构横向于开口外侧。 该方法还包括去除导电材料，使得电介质衬垫材料的第二部分被暴露，并且在电耦合到TSV的电介质衬垫材料的第二部分中形成镶嵌导电线。

公开(公告)号：US20150115445A1

公开(公告)日：2015-04-30

申请号：US14068837

申请日：2013-10-31

Applicant: Micron Technology, Inc.

Inventor： Anurag Jindal ,  Jian He ,  Lalapet Rangan Vasudevan ,  Kyle K. Kirby ,  Hongqi Li

IPC: H01L23/48 ,  H01L21/768

CPC classification number: H01L23/481 ,  H01L21/76801 ,  H01L21/76838 ,  H01L21/76898 ,  H01L23/522 ,  H01L23/528 ,  H01L23/53228 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods of manufacturing semiconductor devices and semiconductor devices with through-substrate vias (TSVs). One embodiment of a method of manufacturing a semiconductor device includes forming an opening through a dielectric structure and at least a portion of a semiconductor substrate, and forming a dielectric liner material having a first portion lining the opening and a second portion on an outer surface of the dielectric structure laterally outside of the opening. The method further includes removing the conductive material such that the second portion of the dielectric liner material is exposed, and forming a damascene conductive line in the second portion of the dielectric liner material that is electrically coupled to the TSV.

Abstract translation: 制造具有贯通衬底通孔（TSV）的半导体器件和半导体器件的方法。 制造半导体器件的方法的一个实施例包括通过电介质结构和半导体衬底的至少一部分形成开口，以及形成具有衬在开口上的第一部分的电介质衬垫材料和在外表面上的第二部分 电介质结构横向于开口外侧。 该方法还包括去除导电材料，使得电介质衬垫材料的第二部分被暴露，并且在电耦合到TSV的电介质衬垫材料的第二部分中形成镶嵌导电线。

公开(公告)号：US20160190042A1

公开(公告)日：2016-06-30

申请号：US15059020

申请日：2016-03-02

Applicant: Micron Technology, Inc.

Inventor： Anurag Jindal ,  Jian He ,  Lalapet Rangan Vasudevan ,  Kyle K. Kirby ,  Hongqi Li

IPC: H01L23/48 ,  H01L23/528 ,  H01L23/532

CPC classification number: H01L23/481 ,  H01L21/76801 ,  H01L21/76838 ,  H01L21/76898 ,  H01L23/522 ,  H01L23/528 ,  H01L23/53228 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods of manufacturing semiconductor devices and semiconductor devices with through-substrate vias (TSVs). One embodiment of a method of manufacturing a semiconductor device includes forming an opening through a dielectric structure and at least a portion of a semiconductor substrate, and forming a dielectric liner material having a first portion lining the opening and a second portion on an outer surface of the dielectric structure laterally outside of the opening. The method further includes removing the conductive material such that the second portion of the dielectric liner material is exposed, and forming a damascene conductive line in the second portion of the dielectric liner material that is electrically coupled to the TSV.

公开(公告)号：US09627295B2

公开(公告)日：2017-04-18

申请号：US15059020

申请日：2016-03-02

Applicant: Micron Technology, Inc.

Inventor： Anurag Jindal ,  Jian He ,  Lalapet Rangan Vasudevan ,  Kyle K. Kirby ,  Hongqi Li

IPC: H01L23/48 ,  H01L21/76 ,  H01L23/52 ,  H01L21/768 ,  H01L23/528 ,  H01L23/532 ,  H01L23/522

CPC classification number: H01L23/481 ,  H01L21/76801 ,  H01L21/76838 ,  H01L21/76898 ,  H01L23/522 ,  H01L23/528 ,  H01L23/53228 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods of manufacturing semiconductor devices and semiconductor devices with through-substrate vias (TSVs). One embodiment of a method of manufacturing a semiconductor device includes forming an opening through a dielectric structure and at least a portion of a semiconductor substrate, and forming a dielectric liner material having a first portion lining the opening and a second portion on an outer surface of the dielectric structure laterally outside of the opening. The method further includes removing the conductive material such that the second portion of the dielectric liner material is exposed, and forming a damascene conductive line in the second portion of the dielectric liner material that is electrically coupled to the TSV.