公开(公告)号：US20180374745A1

公开(公告)日：2018-12-27

申请号：US16103012

申请日：2018-08-14

Applicant: Micron Technology, Inc.

Inventor： Dale W. Collins ,  Joe Lindgren

IPC: H01L21/768 ,  H01L21/285 ,  H01L23/532

Abstract: Some embodiments include methods for depositing copper-containing material utilizing physical vapor deposition of the copper-containing material while keeping a temperature of the deposited copper-containing material at greater than 100° C. Some embodiments include methods in which openings are lined with a metal-containing composition, copper-containing material is physical vapor deposited over the metal-containing composition while a temperature of the copper-containing material is no greater than about 0° C., and the copper-containing material is then annealed while the copper-containing material is at a temperature in a range of from about 180° C. to about 250° C. Some embodiments include methods in which openings are lined with a composition containing metal and nitrogen, and the lined openings are at least partially filled with copper-containing material. Some embodiments include semiconductor constructions having a metal nitride liner along sidewall peripheries of an opening, and having copper-containing material within the opening and directly against the metal nitride liner.

公开(公告)号：US10121697B2

公开(公告)日：2018-11-06

申请号：US14930524

申请日：2015-11-02

Applicant: Micron Technology, Inc.

Inventor： Dale W. Collins ,  Joe Lindgren

IPC: H01L21/768 ,  H01L21/285 ,  H01L23/532

Abstract: Some embodiments include methods for depositing copper-containing material utilizing physical vapor deposition of the copper-containing material while keeping a temperature of the deposited copper-containing material at greater than 100° C. Some embodiments include methods in which openings are lined with a metal-containing composition, copper-containing material is physical vapor deposited over the metal-containing composition while a temperature of the copper-containing material is no greater than about 0° C., and the copper-containing material is then annealed while the copper-containing material is at a temperature in a range of from about 180° C. to about 250° C. Some embodiments include methods in which openings are lined with a composition containing metal and nitrogen, and the lined openings are at least partially filled with copper-containing material. Some embodiments include semiconductor constructions having a metal nitride liner along sidewall peripheries of an opening, and having copper-containing material within the opening and directly against the metal nitride liner.

公开(公告)号：US20160056073A1

公开(公告)日：2016-02-25

申请号：US14930524

申请日：2015-11-02

Applicant: Micron Technology, Inc.

Inventor： Dale W. Collins ,  Joe Lindgren

IPC: H01L21/768 ,  H01L21/285

CPC classification number: H01L21/76843 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/768 ,  H01L21/76856 ,  H01L21/76877 ,  H01L21/76882 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Some embodiments include methods for depositing copper-containing material utilizing physical vapor deposition of the copper-containing material while keeping a temperature of the deposited copper-containing material at greater than 100° C. Some embodiments include methods in which openings are lined with a metal-containing composition, copper-containing material is physical vapor deposited over the metal-containing composition while a temperature of the copper-containing material is no greater than about 0° C., and the copper-containing material is then annealed while the copper-containing material is at a temperature in a range of from about 180° C. to about 250° C. Some embodiments include methods in which openings are lined with a composition containing metal and nitrogen, and the lined openings are at least partially filled with copper-containing material. Some embodiments include semiconductor constructions having a metal nitride liner along sidewall peripheries of an opening, and having copper-containing material within the opening and directly against the metal nitride liner.

Abstract translation: 一些实施例包括利用含铜材料的物理气相沉积同时保持沉积的含铜材料的温度在大于100℃的情况下沉积含铜材料的方法。一些实施例包括其中开口衬有金属的方法 含铜材料在含金属的组合物上物理气相沉积，同时含铜材料的温度不大于约0℃，然后使含铜材料退火，同时铜 - 含有材料的温度范围为约180℃至约250℃。一些实施方案包括其中开口衬有含有金属和氮的组合物的方法，并且衬里的开口至少部分地填充有铜 含材料。 一些实施方案包括在开口的侧壁周边具有金属氮化物衬垫的半导体结构，并且在开口内具有含铜材料并且直接抵靠金属氮化物衬垫。