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公开(公告)号:US11094643B2
公开(公告)日:2021-08-17
申请号:US16372950
申请日:2019-04-02
Applicant: Micron Technology, Inc.
Inventor: Kendall Smith , Kari McLaughlin , Mario J. Di Cino , Xue Chen , Lane A. Gray , Joseph G. Lindsey
IPC: H01L23/544 , H01L21/768 , H01L21/027 , H01L23/528 , H01L21/3213
Abstract: Methods, apparatuses, and systems related to determining overlay of features of a memory array are described. An example method includes forming a plurality of contacts on a working surface and selectively forming a first portion of a layer of conductive lines and a second portion of the layer of conductive lines in contact with the contacts. The first portion of the layer of conductive lines formed over the working surface is separated from the second portion of the layer of conductive lines formed over the working surface by a gap. The method includes determining an overlay of at least one of the contacts formed over the working surface in the gap relative to one of the conductive lines formed over the working surface.
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公开(公告)号:US20200321283A1
公开(公告)日:2020-10-08
申请号:US16372950
申请日:2019-04-02
Applicant: Micron Technology, Inc.
Inventor: Kendall Smith , Kari McLaughlin , Mario J. Di Cino , Xue Chen , Lane A. Gray , Joseph G. Lindsey
IPC: H01L23/544 , H01L21/768 , H01L21/3213 , H01L21/027 , H01L23/528
Abstract: Methods, apparatuses, and systems related to determining overlay of features of a memory array are described. An example method includes forming a plurality of contacts on a working surface and selectively forming a first portion of a layer of conductive lines and a second portion of the layer of conductive lines in contact with the contacts. The first portion of the layer of conductive lines formed over the working surface is separated from the second portion of the layer of conductive lines formed over the working surface by a gap. The method includes determining an overlay of at least one of the contacts formed over the working surface in the gap relative to one of the conductive lines formed over the working surface.
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