公开(公告)号：US20180337035A1

公开(公告)日：2018-11-22

申请号：US16049329

申请日：2018-07-30

Applicant: Micron Technology, Inc.

Inventor： Nicholas Hendricks ,  Adam L. Olson ,  William R. Brown ,  Ho Seop Eom ,  Xue Chen ,  Kaveri Jain ,  Scott Schuldenfrei

IPC: H01L21/027 ,  H01L21/3105 ,  H01L21/033 ,  H01L21/02 ,  B81C1/00 ,  C08L53/00 ,  C08G81/00

CPC classification number: H01L21/0273 ,  B81C1/00031 ,  B81C2201/0149 ,  C08G81/00 ,  C08L53/005 ,  H01L21/02118 ,  H01L21/02175 ,  H01L21/02318 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/31058

Abstract: A self-assembled nanostructure comprises first domains and second domains. The first domains comprise a first block of a block copolymer material and an activatable catalyst. The second domains comprise a second block and substantially without the activatable catalyst. The activatable catalyst is capable of generating catalyst upon application of activation energy, and the generated catalyst is capable of reacting with a metal oxide precursor to provide a metal oxide. A semiconductor structure comprises such self-assembled nanostructure on a substrate.

公开(公告)号：US10049874B2

公开(公告)日：2018-08-14

申请号：US14920018

申请日：2015-10-22

Applicant: Micron Technology, Inc.

Inventor： Nicholas Hendricks ,  Adam L. Olson ,  William R. Brown ,  Ho Seop Eom ,  Xue Chen ,  Kaveri Jain ,  Scott Schuldenfrei

IPC: H01L29/06 ,  H01L21/027 ,  C08G81/00 ,  H01L21/033 ,  H01L21/3105 ,  B81C1/00 ,  C08L53/00 ,  H01L21/02

Abstract: A self-assembled nanostructure comprises first domains and second domains. The first domains comprise a first block of a block copolymer material and an activatable catalyst. The second domains comprise a second block and substantially without the activatable catalyst. The activatable catalyst is capable of generating catalyst upon application of activation energy, and the generated catalyst is capable of reacting with a metal oxide precursor to provide a metal oxide. A semiconductor structure comprises such self-assembled nanostructure on a substrate.

公开(公告)号：US09142504B2

公开(公告)日：2015-09-22

申请号：US14457658

申请日：2014-08-12

Applicant: Micron Technology, Inc.

Inventor： Adam L. Olson ,  Kaveri Jain ,  Lijing Gou ,  William R. Brown ,  Ho Seop Eom ,  Xue Chen ,  Anton J. deVilliers

IPC: H01L29/06 ,  H01L23/52 ,  H01L21/467 ,  H01L21/768 ,  H01L21/027

CPC classification number: H01L23/528 ,  H01L21/0226 ,  H01L21/0273 ,  H01L21/0274 ,  H01L21/3085 ,  H01L21/3086 ,  H01L21/441 ,  H01L21/467 ,  H01L21/76804 ,  H01L21/76816 ,  H01L21/76877 ,  H01L21/76885 ,  H01L23/52 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods of forming features are disclosed. One method comprises forming a resist over a pool of acidic or basic material on a substrate structure, selectively exposing the resist to an energy source to form exposed resist portions and non-exposed resist portions, and diffusing acid or base of the acidic or basic material from the pool into proximal portions of the resist. Another method comprises forming a plurality of recesses in a substrate structure. The plurality of recesses are filled with a pool material comprising acid or base. A resist is formed over the pool material and the substrate structure and acid or base is diffused into adjacent portions of the resist. The resist is patterned to form openings in the resist. The openings comprise wider portions distal to the substrate structure and narrower portions proximal to the substrate structure. Additional methods and semiconductor device structures including the features are disclosed.

Abstract translation: 公开了形成特征的方法。 一种方法包括在衬底结构上的酸性或碱性材料池上形成抗蚀剂，选择性地将抗蚀剂暴露于能量源以形成暴露的抗蚀剂部分和未曝光的抗蚀剂部分，以及将酸性或碱性材料的酸或碱扩散 从池中到抗蚀剂的近端部分。 另一种方法包括在衬底结构中形成多个凹陷。 多个凹部填充有包含酸或碱的池材料。 在池材料上形成抗蚀剂，并且衬底结构和酸或碱扩散到抗蚀剂的相邻部分。 抗蚀剂被图案化以在抗蚀剂中形成开口。 开口包括远离衬底结构的较宽部分和靠近衬底结构的较窄部分。 公开了包括这些特征的附加方法和半导体器件结构。

公开(公告)号：US20140145311A1

公开(公告)日：2014-05-29

申请号：US13687419

申请日：2012-11-28

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Adam L. Olson ,  Kaveri Jain ,  Lijing Gou ,  William R. Brown ,  Ho Seop Eom ,  Xue Chen ,  Anton J. deVilliers

IPC: H01L21/467 ,  H01L23/00 ,  H01L21/441

CPC classification number: H01L23/528 ,  H01L21/0226 ,  H01L21/0273 ,  H01L21/0274 ,  H01L21/3085 ,  H01L21/3086 ,  H01L21/441 ,  H01L21/467 ,  H01L21/76804 ,  H01L21/76816 ,  H01L21/76877 ,  H01L21/76885 ,  H01L23/52 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods of forming features are disclosed. One method comprises forming a resist over a pool of acidic or basic material on a substrate structure, selectively exposing the resist to an energy source to form exposed resist portions and non-exposed resist portions, and diffusing acid or base of the acidic or basic material from the pool into proximal portions of the resist. Another method comprises forming a plurality of recesses in a substrate structure. The plurality of recesses are filled with a pool material comprising acid or base. A resist is formed over the pool material and the substrate structure and acid or base is diffused into adjacent portions of the resist. The resist is patterned to form openings in the resist. The openings comprise wider portions distal to the substrate structure and narrower portions proximal to the substrate structure. Additional methods and semiconductor device structures including the features are disclosed.

Abstract translation: 公开了形成特征的方法。 一种方法包括在衬底结构上的酸性或碱性材料池上形成抗蚀剂，选择性地将抗蚀剂暴露于能量源以形成暴露的抗蚀剂部分和未曝光的抗蚀剂部分，以及将酸性或碱性材料的酸或碱扩散 从池中到抗蚀剂的近端部分。 另一种方法包括在衬底结构中形成多个凹陷。 多个凹部填充有包含酸或碱的池材料。 在池材料上形成抗蚀剂，并且衬底结构和酸或碱扩散到抗蚀剂的相邻部分。 抗蚀剂被图案化以在抗蚀剂中形成开口。 开口包括远离衬底结构的较宽部分和靠近衬底结构的较窄部分。 公开了包括这些特征的附加方法和半导体器件结构。

公开(公告)号：US20230116129A1

公开(公告)日：2023-04-13

申请号：US18062495

申请日：2022-12-06

Applicant: Micron Technology, Inc.

Inventor： Nicholas Hendricks ,  Adam L. Olson ,  William R. Brown ,  Ho Seop Eom ,  Xue Chen ,  Kaveri Jain ,  Scott Schuldenfrei

IPC: H01L21/027 ,  C08G81/00 ,  H01L21/033 ,  H01L21/3105 ,  B81C1/00 ,  C08L53/00 ,  H01L21/02

Abstract: A self-assembled nanostructure comprises first domains and second domains. The first domains comprise a first block of a block copolymer material and an activatable catalyst. The second domains comprise a second block and substantially without the activatable catalyst. The activatable catalyst is capable of generating catalyst upon application of activation energy, and the generated catalyst is capable of reacting with a metal oxide precursor to provide a metal oxide. A semiconductor structure comprises such self-assembled nanostructure on a substrate.

公开(公告)号：US20200321283A1

公开(公告)日：2020-10-08

申请号：US16372950

申请日：2019-04-02

Applicant: Micron Technology, Inc.

Inventor： Kendall Smith ,  Kari McLaughlin ,  Mario J. Di Cino ,  Xue Chen ,  Lane A. Gray ,  Joseph G. Lindsey

IPC: H01L23/544 ,  H01L21/768 ,  H01L21/3213 ,  H01L21/027 ,  H01L23/528

Abstract: Methods, apparatuses, and systems related to determining overlay of features of a memory array are described. An example method includes forming a plurality of contacts on a working surface and selectively forming a first portion of a layer of conductive lines and a second portion of the layer of conductive lines in contact with the contacts. The first portion of the layer of conductive lines formed over the working surface is separated from the second portion of the layer of conductive lines formed over the working surface by a gap. The method includes determining an overlay of at least one of the contacts formed over the working surface in the gap relative to one of the conductive lines formed over the working surface.

公开(公告)号：US09666531B2

公开(公告)日：2017-05-30

申请号：US15192060

申请日：2016-06-24

Applicant: Micron Technology, Inc.

Inventor： Adam L. Olson ,  Kaveri Jain ,  Lijing Gou ,  William R. Brown ,  Ho Seop Eom ,  Xue Chen ,  Anton J. deVilliers

IPC: H01L21/467 ,  H01L23/528 ,  H01L23/52 ,  H01L21/768 ,  H01L21/027 ,  H01L21/02 ,  H01L21/308

CPC classification number: H01L23/528 ,  H01L21/0226 ,  H01L21/0273 ,  H01L21/0274 ,  H01L21/3085 ,  H01L21/3086 ,  H01L21/441 ,  H01L21/467 ,  H01L21/76804 ,  H01L21/76816 ,  H01L21/76877 ,  H01L21/76885 ,  H01L23/52 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of forming a semiconductor structure comprises forming pools of acidic or basic material in a substrate structure. A resist is formed over the pools of acidic or basic material and the substrate structure. The acidic or basic material is diffused from the pools into portions of the resist proximal to the pools more than into portions of the resist distal to the pools. Then, the resist is exposed to a developer to remove a greater amount of the resist portions proximal to the pools compared to the resist portions distal to the pools to form openings in the resist. The openings have wider portions proximal to the substrate structure and narrower portions distal to the substrate structure. The method may further comprise forming features in the openings of the resist. The features have wider portions proximal to the substrate structure and narrower portions distal to the substrate structure.

公开(公告)号：US20160042941A1

公开(公告)日：2016-02-11

申请号：US14920018

申请日：2015-10-22

Applicant: Micron Technology, Inc.

Inventor： Nicholas Hendricks ,  Adam L. Olson ,  William R. Brown ,  Ho Seop Eom ,  Xue Chen ,  Kaveri Jain ,  Scott Schuldenfrei

IPC: H01L21/027 ,  C08L53/00 ,  H01L21/033 ,  H01L21/3105 ,  H01L21/02

CPC classification number: H01L21/0273 ,  B81C1/00031 ,  B81C2201/0149 ,  C08G81/00 ,  C08L53/005 ,  H01L21/02118 ,  H01L21/02175 ,  H01L21/02318 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/31058

Abstract: A self-assembled nanostructure comprises first domains and second domains. The first domains comprise a first block of a block copolymer material and an activatable catalyst. The second domains comprise a second block and substantially without the activatable catalyst. The activatable catalyst is capable of generating catalyst upon application of activation energy, and the generated catalyst is capable of reacting with a metal oxide precursor to provide a metal oxide. A semiconductor structure comprises such self-assembled nanostructure on a substrate.

Abstract translation: 自组装纳米结构包括第一结构域和第二结构域。 第一结构域包括嵌段共聚物材料的第一嵌段和可活化的催化剂。 第二结构域包含第二嵌段并基本上不含可活化的催化剂。 可活化的催化剂能够在施加活化能时产生催化剂，并且所产生的催化剂能够与金属氧化物前体反应以提供金属氧化物。 半导体结构在衬底上包括这样的自组装纳米结构。

公开(公告)号：US08815752B2

公开(公告)日：2014-08-26

申请号：US13687419

申请日：2012-11-28

Applicant: Micron Technology, Inc.

Inventor： Adam L. Olson ,  Kaveri Jain ,  Lijing Gou ,  William R. Brown ,  Ho Seop Eom ,  Xue Chen ,  Anton J. deVilliers

IPC: H01L21/31 ,  H01L21/469

CPC classification number: H01L23/528 ,  H01L21/0226 ,  H01L21/0273 ,  H01L21/0274 ,  H01L21/3085 ,  H01L21/3086 ,  H01L21/441 ,  H01L21/467 ,  H01L21/76804 ,  H01L21/76816 ,  H01L21/76877 ,  H01L21/76885 ,  H01L23/52 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods of forming features are disclosed. One method comprises forming a resist over a pool of acidic or basic material on a substrate structure, selectively exposing the resist to an energy source to form exposed resist portions and non-exposed resist portions, and diffusing acid or base of the acidic or basic material from the pool into proximal portions of the resist. Another method comprises forming a plurality of recesses in a substrate structure. The plurality of recesses are filled with a pool material comprising acid or base. A resist is formed over the pool material and the substrate structure and acid or base is diffused into adjacent portions of the resist. The resist is patterned to form openings in the resist. The openings comprise wider portions distal to the substrate structure and narrower portions proximal to the substrate structure. Additional methods and semiconductor device structures including the features are disclosed.

Abstract translation: 公开了形成特征的方法。 一种方法包括在衬底结构上的酸性或碱性材料池上形成抗蚀剂，选择性地将抗蚀剂暴露于能量源以形成暴露的抗蚀剂部分和未曝光的抗蚀剂部分，以及将酸性或碱性材料的酸或碱扩散 从池中到抗蚀剂的近端部分。 另一种方法包括在衬底结构中形成多个凹陷。 多个凹部填充有包含酸或碱的池材料。 在池材料上形成抗蚀剂，并且衬底结构和酸或碱扩散到抗蚀剂的相邻部分。 抗蚀剂被图案化以在抗蚀剂中形成开口。 开口包括远离衬底结构的较宽部分和靠近衬底结构的较窄部分。 公开了包括这些特征的附加方法和半导体器件结构。

公开(公告)号：US11532477B2

公开(公告)日：2022-12-20

申请号：US16049329

申请日：2018-07-30

Applicant: Micron Technology, Inc.

Inventor： Nicholas Hendricks ,  Adam L. Olson ,  William R. Brown ,  Ho Seop Eom ,  Xue Chen ,  Kaveri Jain ,  Scott Schuldenfrei

IPC: H01L21/027 ,  C08G81/00 ,  H01L21/033 ,  H01L21/3105 ,  B81C1/00 ,  C08L53/00 ,  H01L21/02

Abstract: A self-assembled nanostructure comprises first domains and second domains. The first domains comprise a first block of a block copolymer material and an activatable catalyst. The second domains comprise a second block and substantially without the activatable catalyst. The activatable catalyst is capable of generating catalyst upon application of activation energy, and the generated catalyst is capable of reacting with a metal oxide precursor to provide a metal oxide. A semiconductor structure comprises such self-assembled nanostructure on a substrate.