公开(公告)号：US20240431095A1

公开(公告)日：2024-12-26

申请号：US18733586

申请日：2024-06-04

Applicant: Micron Technology, Inc.

Inventor： Yoshitaka Nakamura ,  Ashwin Panday ,  Iche Huang ,  Richard Beeler ,  Dojun Kim ,  Lane T. Cunningham ,  Adriel Jebin Jacob Jebaraj ,  Scott E. Sills

IPC: H10B12/00

Abstract: Methods, apparatuses, and systems related to a three-dimensional semiconductor device having a doped liner at least disposed between a capacitor and an access device. The doped liner may be configured to provide dopants that diffuse into a semiconductor path of the access device and improve an electrical connection between the access device and the capacitor.