公开(公告)号：US09401285B2

公开(公告)日：2016-07-26

申请号：US14571946

申请日：2014-12-16

Applicant: Micron Technology, Inc.

Inventor： Andrew Carswell ,  Tony M. Lindenberg ,  Mark Morley ,  Kyle Ritter ,  Lequn Liu

IPC: H01L21/306 ,  H01L29/36 ,  H01L21/02 ,  H01L21/308 ,  H01L29/16 ,  H01L23/528

CPC classification number: H01L21/02532 ,  H01L21/02694 ,  H01L21/31053 ,  H01L21/31155 ,  H01L23/528 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Systems and methods for chemical mechanical planarization topography control via implants are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes increasing the content of at least one of silicon or germanium in at least select regions of a dielectric material thereby reducing the material removal rate for a chemical mechanical polishing (CMP) process at the select regions, and removing material from the dielectric material using the CMP process. In another embodiment, a method of manufacturing a semiconductor device includes increasing content of at least one of boron, phosphorus, or hydrogen in at least select regions of a dielectric material thereby increasing the material removal rate of a CMP process at the select regions, and removing material from the dielectric material using the CMP process.

Abstract translation: 公开了通过植入物进行化学机械平面化地形控制的系统和方法。 在一个实施例中，制造半导体器件的方法包括增加介电材料的至少选择区域中的硅或锗中的至少一种的含量，从而降低在选择时的化学机械抛光（CMP）工艺的材料去除速率 区域，并且使用CMP工艺从电介质材料中去除材料。 在另一个实施例中，制造半导体器件的方法包括在介电材料的至少选择区域中增加硼，磷或氢中的至少一种的含量，从而增加在选择区域的CMP工艺的材料去除速率，以及 使用CMP工艺从电介质材料中去除材料。

公开(公告)号：US20160172208A1

公开(公告)日：2016-06-16

申请号：US14571946

申请日：2014-12-16

Applicant: Micron Technology, Inc.

Inventor： Andrew Carswell ,  Tony M. Lindenberg ,  Mark Morley ,  Kyle Ritter ,  Lequn Liu

IPC: H01L21/306 ,  H01L23/528 ,  H01L29/16 ,  H01L29/36 ,  H01L21/02 ,  H01L21/308

CPC classification number: H01L21/02532 ,  H01L21/02694 ,  H01L21/31053 ,  H01L21/31155 ,  H01L23/528 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Systems and methods for chemical mechanical planarization topography control via implants are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes increasing the content of at least one of silicon or germanium in at least select regions of a dielectric material thereby reducing the material removal rate for a chemical mechanical polishing (CMP) process at the select regions, and removing material from the dielectric material using the CMP process. In another embodiment, a method of manufacturing a semiconductor device includes increasing content of at least one of boron, phosphorus, or hydrogen in at least select regions of a dielectric material thereby increasing the material removal rate of a CMP process at the select regions, and removing material from the dielectric material using the CMP process.

Abstract translation: 公开了通过植入物进行化学机械平面化地形控制的系统和方法。 在一个实施例中，制造半导体器件的方法包括增加介电材料的至少选择区域中的硅或锗中的至少一种的含量，从而降低在选择时的化学机械抛光（CMP）工艺的材料去除速率 区域，并且使用CMP工艺从电介质材料中去除材料。 在另一个实施例中，制造半导体器件的方法包括在介电材料的至少选择区域中增加硼，磷或氢中的至少一种的含量，从而增加在选择区域的CMP工艺的材料去除速率，以及 使用CMP工艺从电介质材料中去除材料。