公开(公告)号：US11563027B2

公开(公告)日：2023-01-24

申请号：US17016002

申请日：2020-09-09

Applicant: Micron Technology, Inc.

Inventor： Md Zakir Ullah ,  Xiaosong Zhang ,  Adam L. Olson ,  Mohammad Moydul Islam ,  Tien Minh Quan Tran ,  Chao Zhu ,  Zhigang Yang ,  Merri L. Carlson ,  Hui Chin Chong ,  David A. Kewley ,  Kok Siak Tang

IPC: H01L27/11582 ,  H01L27/11556

Abstract: Microelectronic devices include a lower deck and an upper deck, each comprising a stack structure with a vertically alternating sequence of insulative structures and conductive structures arranged in tiers. A lower array of pillars extends through the stack structure of the lower deck, and an upper array of pillars extends through the stack structure of the upper deck. Along an interface between the lower deck and the upper deck, the pillars of the lower array align with the pillars of the upper array. At least at elevations comprising bases of the pillars, a pillar density of the pillars of the lower array differs from a pillar density of the pillars of the upper array, “pillar density” being a number of pillars per unit of horizontal area of the respective array. Related methods and electronic systems are also disclosed.

公开(公告)号：US12178045B2

公开(公告)日：2024-12-24

申请号：US18158576

申请日：2023-01-24

Applicant: Micron Technology, Inc.

Inventor： Md Zakir Ullah ,  Xiaosong Zhang ,  Adam L. Olson ,  Mohammad Moydul Islam ,  Tien Minh Quan Tran ,  Chao Zhu ,  Zhigang Yang ,  Merri L. Carlson ,  Hui Chin Chong ,  David A. Kewley ,  Kok Siak Tang

IPC: H10B43/27 ,  H10B41/27

Abstract: Microelectronic devices include a lower deck and an upper deck, each comprising a stack structure with a vertically alternating sequence of insulative structures and conductive structures arranged in tiers. First and second arrays of pillars extend through the stack structure of the lower and upper decks, respectively. In one or more of the first and second pillar arrays, at least some pillars exhibit a greater degree of bending away from a vertical orientation than at least some other pillars. The pillars of the first array align with the pillars of the second array along an interface between the lower and upper decks. Related methods are also disclosed.

公开(公告)号：US20250120085A1

公开(公告)日：2025-04-10

申请号：US18985534

申请日：2024-12-18

Applicant: Micron Technology, Inc.

Inventor： Md Zakir Ullah ,  Xiaosong Zhang ,  Adam L. Olson ,  Mohammad Moydul Islam ,  Tien Minh Quan Tran ,  Chao Zhu ,  Zhigang Yang ,  Merri L. Carlson ,  Hui Chin Chong ,  David A. Kewley ,  Kok Siak Tang

IPC: H10B43/27 ,  H10B41/10 ,  H10B41/27 ,  H10B43/10

Abstract: Microelectronic devices include a lower deck and an upper deck, each comprising a stack structure with a vertically alternating sequence of insulative structures and conductive structures arranged in tiers. First and second arrays of pillars extend through the stack structure of the lower and upper decks, respectively. In one or more of the first and second pillar arrays, at least some pillars exhibit a greater degree of bending away from a vertical orientation than at least some other pillars. The pillars of the first array align with the pillars of the second array along an interface between the lower and upper decks. Related methods are also disclosed.

公开(公告)号：US20230165004A1

公开(公告)日：2023-05-25

申请号：US18158576

申请日：2023-01-24

Applicant: Micron Technology, Inc.

Inventor： Md Zakir Ullah ,  Xiaosong Zhang ,  Adam L. Olson ,  Mohammad Moydul Islam ,  Tien Minh Quan Tran ,  Chao Zhu ,  Zhigang Yang ,  Merri L. Carlson ,  Hui Chin Chong ,  David A. Kewley ,  Kok Siak Tang

IPC: H10B43/27 ,  H10B41/27

CPC classification number: H10B43/27 ,  H10B41/27

Abstract: Microelectronic devices include a lower deck and an upper deck, each comprising a stack structure with a vertically alternating sequence of insulative structures and conductive structures arranged in tiers. First and second arrays of pillars extend through the stack structure of the lower and upper decks, respectively. In one or more of the first and second pillar arrays, at least some pillars exhibit a greater degree of bending away from a vertical orientation than at least some other pillars. The pillars of the first array align with the pillars of the second array along an interface between the lower and upper decks. Related methods are also disclosed.

公开(公告)号：US20220077177A1

公开(公告)日：2022-03-10

申请号：US17016002

申请日：2020-09-09

Applicant: Micron Technology, Inc.

Inventor： Md Zakir Ullah ,  Xiaosong Zhang ,  Adam L. Olson ,  Mohammad Moydul Islam ,  Tien Minh Quan Tran ,  Chao Zhu ,  Zhigang Yang ,  Merri L. Carlson ,  Hui Chin Chong ,  David A. Kewley ,  Kok Siak Tang

IPC: H01L27/11582 ,  H01L27/11556

Abstract: Microelectronic devices include a lower deck and an upper deck, each comprising a stack structure with a vertically alternating sequence of insulative structures and conductive structures arranged in tiers. A lower array of pillars extends through the stack structure of the lower deck, and an upper array of pillars extends through the stack structure of the upper deck. Along an interface between the lower deck and the upper deck, the pillars of the lower array align with the pillars of the upper array. At least at elevations comprising bases of the pillars, a pillar density of the pillars of the lower array differs from a pillar density of the pillars of the upper array, “pillar density” being a number of pillars per unit of horizontal area of the respective array. Related methods and electronic systems are also disclosed.