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公开(公告)号：US11563027B2
公开(公告)日：2023-01-24
申请号：US17016002
申请日：2020-09-09
Applicant: Micron Technology, Inc.
Inventor： Md Zakir Ullah , Xiaosong Zhang , Adam L. Olson , Mohammad Moydul Islam , Tien Minh Quan Tran , Chao Zhu , Zhigang Yang , Merri L. Carlson , Hui Chin Chong , David A. Kewley , Kok Siak Tang
IPC: H01L27/11582 , H01L27/11556
Abstract: Microelectronic devices include a lower deck and an upper deck, each comprising a stack structure with a vertically alternating sequence of insulative structures and conductive structures arranged in tiers. A lower array of pillars extends through the stack structure of the lower deck, and an upper array of pillars extends through the stack structure of the upper deck. Along an interface between the lower deck and the upper deck, the pillars of the lower array align with the pillars of the upper array. At least at elevations comprising bases of the pillars, a pillar density of the pillars of the lower array differs from a pillar density of the pillars of the upper array, “pillar density” being a number of pillars per unit of horizontal area of the respective array. Related methods and electronic systems are also disclosed.
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公开(公告)号：US20220077178A1
公开(公告)日：2022-03-10
申请号：US17016039
申请日：2020-09-09
Applicant: Micron Technology, Inc.
Inventor： Kaiming Luo , Sarfraz Qureshi , Md Zakir Ullah , Jessica Low Jing Wen , Harsh Narendrakumar Jain , Kok Siak Tang , Indra V. Chary , Matthew J. King
IPC: H01L27/11582 , H01L27/11556
Abstract: Microelectronic devices include a stack structure with a vertically alternating sequence of insulative structures and conductive structures arranged in tiers. A series of slit structures extends through the stack structure and devices the stack structure into a series of blocks. In a progressed portion of the series of blocks, each block comprises an array of pillars extending the through the stack structure of the block. Also, each block—in the progressed portion—has a different block width than a block width of a neighboring block of the progressed portion of the series of blocks. At least one pillar, of the pillars of the array of pillars in the progressed portion, exhibits bending. Related methods and electronic systems are also disclosed.
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Patent Agency Ranking
3.发明授权公开(公告)号：US12178045B2
公开(公告)日：2024-12-24
申请号：US18158576
申请日：2023-01-24
Applicant: Micron Technology, Inc.
Inventor： Md Zakir Ullah , Xiaosong Zhang , Adam L. Olson , Mohammad Moydul Islam , Tien Minh Quan Tran , Chao Zhu , Zhigang Yang , Merri L. Carlson , Hui Chin Chong , David A. Kewley , Kok Siak Tang
Abstract: Microelectronic devices include a lower deck and an upper deck, each comprising a stack structure with a vertically alternating sequence of insulative structures and conductive structures arranged in tiers. First and second arrays of pillars extend through the stack structure of the lower and upper decks, respectively. In one or more of the first and second pillar arrays, at least some pillars exhibit a greater degree of bending away from a vertical orientation than at least some other pillars. The pillars of the first array align with the pillars of the second array along an interface between the lower and upper decks. Related methods are also disclosed.
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公开(公告)号：US11641741B2
公开(公告)日：2023-05-02
申请号：US17016039
申请日：2020-09-09
Applicant: Micron Technology, Inc.
Inventor： Kaiming Luo , Sarfraz Qureshi , Md Zakir Ullah , Jessica Jing Wen Low , Harsh Narendrakumar Jain , Kok Siak Tang , Indra V. Chary , Matthew J. King
IPC: H01L27/11521 , H01L27/11582 , H01L27/11556 , H01L27/11568
Abstract: Microelectronic devices include a stack structure with a vertically alternating sequence of insulative structures and conductive structures arranged in tiers. A series of slit structures extends through the stack structure and divides the stack structure into a series of blocks. In a progressed portion of the series of blocks, each block comprises an array of pillars extending through the stack structure of the block. Also, each block—in the progressed portion—has a different block width than a block width of a neighboring block of the progressed portion of the series of blocks. At least one pillar, of the pillars of the array of pillars in the progressed portion, exhibits bending. Related methods and electronic systems are also disclosed.
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公开(公告)号：US20250120085A1
公开(公告)日：2025-04-10
申请号：US18985534
申请日：2024-12-18
Applicant: Micron Technology, Inc.
Inventor： Md Zakir Ullah , Xiaosong Zhang , Adam L. Olson , Mohammad Moydul Islam , Tien Minh Quan Tran , Chao Zhu , Zhigang Yang , Merri L. Carlson , Hui Chin Chong , David A. Kewley , Kok Siak Tang
Abstract: Microelectronic devices include a lower deck and an upper deck, each comprising a stack structure with a vertically alternating sequence of insulative structures and conductive structures arranged in tiers. First and second arrays of pillars extend through the stack structure of the lower and upper decks, respectively. In one or more of the first and second pillar arrays, at least some pillars exhibit a greater degree of bending away from a vertical orientation than at least some other pillars. The pillars of the first array align with the pillars of the second array along an interface between the lower and upper decks. Related methods are also disclosed.
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6.发明公开公开(公告)号：US20230165004A1
公开(公告)日：2023-05-25
申请号：US18158576
申请日：2023-01-24
Applicant: Micron Technology, Inc.
Inventor： Md Zakir Ullah , Xiaosong Zhang , Adam L. Olson , Mohammad Moydul Islam , Tien Minh Quan Tran , Chao Zhu , Zhigang Yang , Merri L. Carlson , Hui Chin Chong , David A. Kewley , Kok Siak Tang
Abstract: Microelectronic devices include a lower deck and an upper deck, each comprising a stack structure with a vertically alternating sequence of insulative structures and conductive structures arranged in tiers. First and second arrays of pillars extend through the stack structure of the lower and upper decks, respectively. In one or more of the first and second pillar arrays, at least some pillars exhibit a greater degree of bending away from a vertical orientation than at least some other pillars. The pillars of the first array align with the pillars of the second array along an interface between the lower and upper decks. Related methods are also disclosed.
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公开(公告)号：US20220077177A1
公开(公告)日：2022-03-10
申请号：US17016002
申请日：2020-09-09
Applicant: Micron Technology, Inc.
Inventor： Md Zakir Ullah , Xiaosong Zhang , Adam L. Olson , Mohammad Moydul Islam , Tien Minh Quan Tran , Chao Zhu , Zhigang Yang , Merri L. Carlson , Hui Chin Chong , David A. Kewley , Kok Siak Tang
IPC: H01L27/11582 , H01L27/11556
Abstract: Microelectronic devices include a lower deck and an upper deck, each comprising a stack structure with a vertically alternating sequence of insulative structures and conductive structures arranged in tiers. A lower array of pillars extends through the stack structure of the lower deck, and an upper array of pillars extends through the stack structure of the upper deck. Along an interface between the lower deck and the upper deck, the pillars of the lower array align with the pillars of the upper array. At least at elevations comprising bases of the pillars, a pillar density of the pillars of the lower array differs from a pillar density of the pillars of the upper array, “pillar density” being a number of pillars per unit of horizontal area of the respective array. Related methods and electronic systems are also disclosed.
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