公开(公告)号：US10079169B1

公开(公告)日：2018-09-18

申请号：US15797029

申请日：2017-10-30

申请人： Micron Technology, Inc.

发明人： Andy E. Hooper ,  Nicholas Wade Clyde

IPC分类号： H01L21/78 ,  H01L21/683 ,  H01L21/268 ,  H01L21/67 ,  B23K26/364 ,  H01L21/02 ,  B23K101/40

CPC分类号： H01L21/6836 ,  B23K26/009 ,  B23K26/364 ,  B23K2101/40 ,  H01L21/02057 ,  H01L21/268 ,  H01L21/67092 ,  H01L21/78 ,  H01L2221/68327 ,  H01L2221/68336

摘要： A method of forming a plurality of semiconductor devices includes applying a tape material to a back side of a semiconductor device having a silicon layer on the back side and a circuitry layer on the front side, lasing with an infrared laser the silicon layer through the tape material, lasing with a second laser the circuitry layer, and expanding the tape material for form a plurality of semiconductor devices. The second layer may be an ultraviolet laser. The lasers may be irradiated in a pattern on the bottom side and the top side. The second layer may form a groove in the circuitry layer that does not penetrate the silicon layer. The infrared laser may cleave a portion of the silicon lattice of the silicon layer. A coating may be applied to the circuitry layer prior to being irradiated with the second laser.

公开(公告)号：US20190131160A1

公开(公告)日：2019-05-02

申请号：US16017567

申请日：2018-06-25

申请人： Micron Technology, Inc.

发明人： Andy E. Hooper ,  Nicholas Wade Clyde

IPC分类号： H01L21/683 ,  H01L21/02 ,  B23K26/364

CPC分类号： H01L21/6836 ,  B23K26/009 ,  B23K26/364 ,  B23K2101/40 ,  H01L21/02057 ,  H01L21/268 ,  H01L21/67092 ,  H01L21/78 ,  H01L2221/68327 ,  H01L2221/68336

摘要： A method of forming a plurality of semiconductor devices includes applying a tape material to a back side of a semiconductor device having a silicon layer on the back side and a circuitry layer on the front side, lasing with an infrared laser the silicon layer through the tape material, lasing with a second laser the circuitry layer, and expanding the tape material for form a plurality of semiconductor devices. The second layer may be an ultraviolet laser. The lasers may be irradiated in a pattern on the bottom side and the top side. The second layer may form a groove in the circuitry layer that does not penetrate the silicon layer. The infrared laser may cleave a portion of the silicon lattice of the silicon layer. A coating may be applied to the circuitry layer prior to being irradiated with the second laser.

公开(公告)号：US10373857B2

公开(公告)日：2019-08-06

申请号：US16017567

申请日：2018-06-25

申请人： Micron Technology, Inc.

发明人： Andy E. Hooper ,  Nicholas Wade Clyde

IPC分类号： H01L21/683 ,  H01L21/02 ,  B23K26/364 ,  H01L21/67 ,  H01L21/78 ,  H01L21/268 ,  B23K101/40

摘要： A method of forming a plurality of semiconductor devices includes applying a tape material to a back side of a semiconductor device having a silicon layer on the back side and a circuitry layer on the front side, lasing with an infrared laser the silicon layer through the tape material, lasing with a second laser the circuitry layer, and expanding the tape material for form a plurality of semiconductor devices. The second layer may be an ultraviolet laser. The lasers may be irradiated in a pattern on the bottom side and the top side. The second layer may form a groove in the circuitry layer that does not penetrate the silicon layer. The infrared laser may cleave a portion of the silicon lattice of the silicon layer. A coating may be applied to the circuitry layer prior to being irradiated with the second laser.