公开(公告)号：US10770466B2

公开(公告)日：2020-09-08

申请号：US16258296

申请日：2019-01-25

Applicant: Micron Technology, Inc.

Inventor： Naoyoshi Kobayashi ,  Osamu Fujita ,  Katsumi Koge

IPC: H01L27/108

Abstract: A semiconductor device comprises laterally-neighboring word lines having respective word line caps thereon, an active region between the laterally-neighboring word lines and word line caps, an insulating material and a semiconductive material adjacent the word line caps, and a digit line contact between opposing substantially vertical surfaces of the semiconductive material, between opposing substantially vertical surfaces of the insulating material, adjacent to substantially horizontal surfaces of the word line caps, and between opposing substantially vertical surfaces of the word line caps. A transition surface extending between and connecting the substantially horizontal surface and the substantially vertical surface of the respective word line caps projects toward a longitudinal axis extending centrally through the digit line contact. Methods of forming the semiconductor device are also disclosed, as are electronic systems including the semiconductor device.

公开(公告)号：US20200243539A1

公开(公告)日：2020-07-30

申请号：US16258296

申请日：2019-01-25

Applicant: Micron Technology, Inc.

Inventor： Naoyoshi Kobayashi ,  Osamu Fujita ,  Katsumi Koge

IPC: H01L27/108

Abstract: A semiconductor device comprises laterally-neighboring word lines having respective word line caps thereon, an active region between the laterally-neighboring word lines and word line caps, an insulating material and a semiconductive material adjacent the word line caps, and a digit line contact between opposing substantially vertical surfaces of the semiconductive material, between opposing substantially vertical surfaces of the insulating material, adjacent to substantially horizontal surfaces of the word line caps, and between opposing substantially vertical surfaces of the word line caps. A transition surface extending between and connecting the substantially horizontal surface and the substantially vertical surface of the respective word line caps projects toward a longitudinal axis extending centrally through the digit line contact. Methods of forming the semiconductor device are also disclosed, as are electronic systems including the semiconductor device.