公开(公告)号：US10910033B2

公开(公告)日：2021-02-02

申请号：US16220742

申请日：2018-12-14

Applicant: Micron Technology, Inc.

Inventor： Stephen Michael Kaminski ,  Anthony D. Veches ,  James S. Rehmeyer ,  Debra M. Bell ,  Dale Herber Hiscock ,  Joshua E. Alzheimer

IPC: G11C11/406 ,  G11C11/4072 ,  G11C11/4091

Abstract: Methods, systems, and devices for refresh-related activation in memory are described. A memory device may conduct a refresh operation to preserve the integrity of data. A refresh operation may be associated with a refresh time where the memory device is unable to execute or issue any commands (e.g., access commands). By posting (e.g., saving) one or more commands and/or row addresses during the refresh time, the memory device may be configured to execute the saved commands and/or re-open one or more rows associated with the saved row addresses at a later time (e.g., upon completion of the refresh operation). Accordingly, fewer commands may be issued to activate the memory cells after the refresh time.

公开(公告)号：US11282562B2

公开(公告)日：2022-03-22

申请号：US17159706

申请日：2021-01-27

Applicant: Micron Technology, Inc.

Inventor： Stephen Michael Kaminski ,  Anthony D. Veches ,  James S. Rehmeyer ,  Debra M. Bell ,  Dale Herber Hiscock ,  Joshua E. Alzheimer

IPC: G11C11/406 ,  G11C11/4072 ,  G11C11/4091

Abstract: Methods, systems, and devices for refresh-related activation in memory are described. A memory device may conduct a refresh operation to preserve the integrity of data. A refresh operation may be associated with a refresh time where the memory device is unable to execute or issue any commands (e.g., access commands). By posting (e.g., saving) one or more commands and/or row addresses during the refresh time, the memory device may be configured to execute the saved commands and/or re-open one or more rows associated with the saved row addresses at a later time (e.g., upon completion of the refresh operation). Accordingly, fewer commands may be issued to activate the memory cells after the refresh time.

公开(公告)号：US20210225433A1

公开(公告)日：2021-07-22

申请号：US17159706

申请日：2021-01-27

Applicant: Micron Technology, Inc.

Inventor： Stephen Michael Kaminski ,  Anthony D. Veches ,  James S. Rehmeyer ,  Debra M. Bell ,  Dale Herber Hiscock ,  Joshua E. Alzheimer

IPC: G11C11/406 ,  G11C11/4072 ,  G11C11/4091

Abstract: Methods, systems, and devices for refresh-related activation in memory are described. A memory device may conduct a refresh operation to preserve the integrity of data. A refresh operation may be associated with a refresh time where the memory device is unable to execute or issue any commands (e.g., access commands). By posting (e.g., saving) one or more commands and/or row addresses during the refresh time, the memory device may be configured to execute the saved commands and/or re-open one or more rows associated with the saved row addresses at a later time (e.g., upon completion of the refresh operation). Accordingly, fewer commands may be issued to activate the memory cells after the refresh time.