中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

6 records (took 0.014 seconds)

    Device module having a plurality of dies electrically connected by posts
    1.
    发明授权
    Device module having a plurality of dies electrically connected by posts 有权

    公开(公告)号：US10325874B2

    公开(公告)日：2019-06-18

    申请号：US16175449

    申请日：2018-10-30

    Applicant: Micron Technology, Inc.

    Inventor： Ashok Pachamuthu ,  Chan H. Yoo ,  Szu-Ying Ho ,  John F. Kaeding

    IPC: H01L23/34 ,  H01L21/00 ,  H01L23/00 ,  H01L23/31 ,  H01L25/065 ,  H01L21/56 ,  H01L21/683 ,  H01L25/00 ,  H01L21/768

    Abstract: Semiconductor device modules may include a redistribution layer and a first semiconductor die. A second semiconductor die may be located on the first semiconductor die. Posts may be located laterally adjacent to the first semiconductor die and the second semiconductor die. A first encapsulant may at least laterally surround the first semiconductor die, the second semiconductor die, and the posts. Electrical connectors may extend laterally from the posts, over the first encapsulant, to bond pads on a second active surface of the second semiconductor die. A protective material may cover the electrical connectors. A second encapsulant may be located over the protective material and the electrical connectors. The second encapsulant may be in direct contact with the first encapsulant, the electrical connectors, and the protective material. Conductive bumps may be connected to the redistribution layer on a side of the redistribution layer opposite the first semiconductor die.

    METHODS OF MAKING SEMICONDUCTOR DEVICE MODULES WITH INCREASED YIELD
    3.
    发明申请
    METHODS OF MAKING SEMICONDUCTOR DEVICE MODULES WITH INCREASED YIELD 审中-公开

    公开(公告)号：US20190035755A1

    公开(公告)日：2019-01-31

    申请号：US15660442

    申请日：2017-07-26

    Applicant: Micron Technology, Inc.

    Inventor： Ashok Pachamuthu ,  Chan H. Yoo ,  Szu-Ying Ho ,  John F. Kaeding

    IPC: H01L23/00 ,  H01L21/768 ,  H01L25/00 ,  H01L21/56 ,  H01L21/683 ,  H01L25/065 ,  H01L23/31

    Abstract: Methods of making semiconductor device modules may involve forming holes in a sacrificial material and placing an electrically conductive material in the holes. The sacrificial material may be removed to expose posts of the electrically conductive material. A stack of semiconductor dice may be placed between at least two of the posts after removing the sacrificial material, one of the semiconductor dice of the stack including an active surface facing in a direction opposite a direction in which another active surface of another of the semiconductor dice of the stack. The posts and the stack of semiconductor dice may be at least laterally encapsulated in an encapsulant. Bond pads of the one of the semiconductor dice may be electrically connected to corresponding posts after at least laterally encapsulating the posts and the stack of semiconductor dice.

    HIGH-YIELD SEMICONDUCTOR DEVICE MODULES AND RELATED SYSTEMS
    5.
    发明申请
    HIGH-YIELD SEMICONDUCTOR DEVICE MODULES AND RELATED SYSTEMS 审中-公开

    公开(公告)号：US20190067233A1

    公开(公告)日：2019-02-28

    申请号：US16175449

    申请日：2018-10-30

    Applicant: Micron Technology, Inc.

    Inventor： Ashok Pachamuthu ,  Chan H. Yoo ,  Szu-Ying Ho ,  John F. Kaeding

    IPC: H01L23/00 ,  H01L23/31 ,  H01L25/065 ,  H01L21/56 ,  H01L21/683 ,  H01L25/00 ,  H01L21/768

    Abstract: Semiconductor device modules may include a redistribution layer and a first semiconductor die. A second semiconductor die may be located on the first semiconductor die. Posts may be located laterally adjacent to the first semiconductor die and the second semiconductor die. A first encapsulant may at least laterally surround the first semiconductor die, the second semiconductor die, and the posts. Electrical connectors may extend laterally from the posts, over the first encapsulant, to bond pads on a second active surface of the second semiconductor die. A protective material may cover the electrical connectors. A second encapsulant may be located over the protective material and the electrical connectors. The second encapsulant may be in direct contact with the first encapsulant, the electrical connectors, and the protective material. Conductive bumps may be connected to the redistribution layer on a side of the redistribution layer opposite the first semiconductor die.

    Methods of making semiconductor device modules with increased yield
    6.
    发明授权
    Methods of making semiconductor device modules with increased yield 有权

    公开(公告)号：US10192843B1

    公开(公告)日：2019-01-29

    申请号：US15660442

    申请日：2017-07-26

    Applicant: Micron Technology, Inc.

    Inventor： Ashok Pachamuthu ,  Chan H. Yoo ,  Szu-Ying Ho ,  John F. Kaeding

    IPC: H01L23/34 ,  H01L21/00 ,  H01L23/00 ,  H01L21/768 ,  H01L25/00 ,  H01L21/56 ,  H01L21/683 ,  H01L25/065 ,  H01L23/31

    Abstract: Methods of making semiconductor device modules may involve forming holes in a sacrificial material and placing an electrically conductive material in the holes. The sacrificial material may be removed to expose posts of the electrically conductive material. A stack of semiconductor dice may be placed between at least two of the posts after removing the sacrificial material, one of the semiconductor dice of the stack including an active surface facing in a direction opposite a direction in which another active surface of another of the semiconductor dice of the stack. The posts and the stack of semiconductor dice may be at least laterally encapsulated in an encapsulant. Bond pads of the one of the semiconductor dice may be electrically connected to corresponding posts after at least laterally encapsulating the posts and the stack of semiconductor dice.

Patent Agency Ranking