公开(公告)号：US20220366224A1

公开(公告)日：2022-11-17

申请号：US17319765

申请日：2021-05-13

Applicant: Micron Technology, Inc.

Inventor： Dmitry Vengertsev ,  Seth A. Eichmeyer ,  Jing Gong ,  John Christopher M. Sancon ,  Nicola Ciocchini ,  Tom Tangelder

IPC: G06N3/063 ,  G06N3/04 ,  G11C11/54 ,  G11C13/00

Abstract: Apparatuses and methods can be related to implementing a binary neural network in memory. A binary neural network can be implemented utilizing a resistive memory array. The memory array can comprise programmable memory cells that can be programed and used to store weights of the binary neural network and perform operations consistent with the binary neural network. The weights of the binary neural network can correspond to non-zero values.