公开(公告)号：US20220246727A1

公开(公告)日：2022-08-04

申请号：US17165753

申请日：2021-02-02

Applicant: Micron Technology, Inc.

Inventor： Venkata Naveen Kumar Neelapala ,  Deepak Chandra Pandey

IPC: H01L29/165 ,  H01L27/108

Abstract: An apparatus comprises active word lines extending within a semiconductive material, passing word lines extending adjacent to the active word lines within the semiconductive material, isolation regions adjacent to the passing word lines, and a band offset material adjacent to the passing word lines and the isolation regions. The semiconductive material exhibits a first bandgap and the band offset material exhibits a second, different bandgap. Related methods and systems are also described.

公开(公告)号：US20210391337A1

公开(公告)日：2021-12-16

申请号：US16899339

申请日：2020-06-11

Applicant: Micron Technology, Inc.

Inventor： Deepak Chandra Pandey ,  Venkata Naveen Kumar Neelapala ,  Haitao Liu

IPC: H01L27/108

Abstract: A microelectronic device comprises a first pillar of a semiconductive material, a second pillar of the semiconductive material adjacent to the first pillar of the semiconductive material, an active word line extending between the first pillar and the second pillar, and a passing word line extending on a side of the second pillar opposite the active word line, the passing word line extending into an isolation region within the semiconductive material, the isolation region comprising a lower portion and an upper portion having a substantially circular cross-sectional shape and a larger lateral dimension than the lower portion. Related microelectronic devices, electronic systems, and methods are also described.

公开(公告)号：US11569353B2

公开(公告)日：2023-01-31

申请号：US17165753

申请日：2021-02-02

Applicant: Micron Technology, Inc.

Inventor： Venkata Naveen Kumar Neelapala ,  Deepak Chandra Pandey

IPC: H01L27/108 ,  H01L29/165

Abstract: An apparatus comprises active word lines extending within a semiconductive material, passing word lines extending adjacent to the active word lines within the semiconductive material, isolation regions adjacent to the passing word lines, and a band offset material adjacent to the passing word lines and the isolation regions. The semiconductive material exhibits a first bandgap and the band offset material exhibits a second, different bandgap. Related methods and systems are also described.

公开(公告)号：US20210183865A1

公开(公告)日：2021-06-17

申请号：US16711531

申请日：2019-12-12

Applicant: Micron Technology, Inc.

Inventor： Venkata Naveen Kumar Neelapala ,  Deepak Chandra Pandey ,  Naveen Kaushik

IPC: H01L27/108

Abstract: Systems, apparatuses, and methods related to semiconductor structure formation are described. An example apparatus includes a first trench and a second trench formed in a semiconductor substrate material, where the first and second trenches are adjacent and separated by the semiconductor substrate material. The apparatus includes a metallic material formed to a first height in the first trench that is less than, relative to the semiconductor substrate material, a second height of the metallic material formed in the second trench and a polysilicon material formed over the metallic material in the first trench to a first depth greater than, relative to the semiconductor substrate material, a second depth of the polysilicon material formed over the metallic material in the second trench. The greater first depth of the polysilicon material formed in the first trench reduces transfer of charge by way of the metallic material in the first trench.

公开(公告)号：US11515311B2

公开(公告)日：2022-11-29

申请号：US16711531

申请日：2019-12-12

Applicant: Micron Technology, Inc.

Inventor： Venkata Naveen Kumar Neelapala ,  Deepak Chandra Pandey ,  Naveen Kaushik

IPC: H01L27/108 ,  H01L29/423

Abstract: Systems, apparatuses, and methods related to semiconductor structure formation are described. An example apparatus includes a first trench and a second trench formed in a semiconductor substrate material, where the first and second trenches are adjacent and separated by the semiconductor substrate material. The apparatus includes a metallic material formed to a first height in the first trench that is less than, relative to the semiconductor substrate material, a second height of the metallic material formed in the second trench and a polysilicon material formed over the metallic material in the first trench to a first depth greater than, relative to the semiconductor substrate material, a second depth of the polysilicon material formed over the metallic material in the second trench. The greater first depth of the polysilicon material formed in the first trench reduces transfer of charge by way of the metallic material in the first trench.

公开(公告)号：US11430793B2

公开(公告)日：2022-08-30

申请号：US16899339

申请日：2020-06-11

Applicant: Micron Technology, Inc.

Inventor： Deepak Chandra Pandey ,  Venkata Naveen Kumar Neelapala ,  Haitao Liu

IPC: H01L27/108

Abstract: A microelectronic device comprises a first pillar of a semiconductive material, a second pillar of the semiconductive material adjacent to the first pillar of the semiconductive material, an active word line extending between the first pillar and the second pillar, and a passing word line extending on a side of the second pillar opposite the active word line, the passing word line extending into an isolation region within the semiconductive material, the isolation region comprising a lower portion and an upper portion having a substantially circular cross-sectional shape and a larger lateral dimension than the lower portion. Related microelectronic devices, electronic systems, and methods are also described.