公开(公告)号：US20230065248A1

公开(公告)日：2023-03-02

申请号：US17820199

申请日：2022-08-16

Applicant: Micron Technology, Inc.

Inventor： Wei Zhou ,  Eiichi Nakano ,  Ying Ta Chiu

IPC: H01L23/00 ,  H01L25/065 ,  H01L21/56 ,  H01L21/683 ,  H01L21/78 ,  H01L25/00

Abstract: A semiconductor device assembly including a first semiconductor device having a front side and a back side opposite of the front side, metal interconnects formed on the back side, and a polymer material deposited over the first semiconductor device to encapsulate the sidewalls, back side, and metal interconnects. The first semiconductor device is planarized to expose the upper surface of the metal interconnects. The assembly further includes a second semiconductor device having a top side and a bottom side opposite of the top side, a polymer material deposited over the second semiconductor device to encapsulate the sidewalls and bottom side. The second semiconductor device is stacked over the first device and hybrid bonded together such that each metal interconnect on the first semiconductor device back side aligns with and electrically couples to a corresponding metal interconnect on the second semiconductor device bottom side.